BSM50GD120DN2G Infineon Technologies, BSM50GD120DN2G Datasheet

BSM50GD120DN2G

Manufacturer Part Number

BSM50GD120DN2G

Description

IGBT Modules 1200V 50A 3-PHASE

Manufacturer

Infineon Technologies

Datasheet

1.BSM50GD120DN2G.pdf (10 pages)

Specifications of BSM50GD120DN2G

Configuration

Hex

Collector- Emitter Voltage Vceo Max

1200 V

Collector-emitter Saturation Voltage

2.5 V

Continuous Collector Current At 25 C

78 A

Gate-emitter Leakage Current

200 nA

Power Dissipation

400 W

Maximum Operating Temperature

+ 150 C

Maximum Gate Emitter Voltage

20 V

Mounting Style

Screw

Package / Case

EconoPACK 3A

Channel Type

Collector-emitter Voltage

1.2kV

Gate To Emitter Voltage (max)

±20V

Mounting

Screw

Operating Temperature (min)

-40C

Operating Temperature (max)

150C

Operating Temperature Classification

Automotive

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BSM50GD120DN2G

Manufacturer:

LAMBDA

Quantity:

530

Company:

HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED

Part Number:

BSM50GD120DN2G

Quantity:

143

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BSM 50 GD 120 DN2G

IGBT Power Module

• Power module

• 3-phase full-bridge

• Including fast free-wheel diodes

• Package with insulated metal base plate

Type

BSM 50 GD 120 DN2G

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-gate voltage

Gate-emitter voltage

DC collector current

Pulsed collector current, t

Power dissipation per IGBT

Chip temperature

Storage temperature

Thermal resistance, chip case

Diode thermal resistance, chip case

Insulation test voltage, t = 1min.

Creepage distance

Clearance

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

= 25 °C

= 80 °C

= 25 °C

= 80 °C

= 25 °C

= 20 k

= 1 ms

1200V 78A

Package

ECONOPACK 3

Symbol

Cpuls

CGR

tot

stg

thJC

thJCD

40 / 125 / 56

-40 ... + 125

Values

Ordering Code

C67070-A2521-A67

+ 150

± 20

1200

2500

156

100

400

0.35

0.7

Oct-01-2003

Unit

°C

K/W

Vac

sec

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BSM50GD120DN2G Summary of contents

Page 1

BSM 50 GD 120 DN2G IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 50 GD 120 DN2G Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage R ...

Page 2

BSM 50 GD 120 DN2G Electrical Characteristics Parameter Static Characteristics Gate threshold voltage CE, C Collector-emitter saturation voltage °C ...

Page 3

BSM 50 GD 120 DN2G Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 600 Gon Rise time V = 600 V, ...

Page 4

BSM 50 GD 120 DN2G Power dissipation tot C parameter: T 150 °C j 450 W P 350 tot 300 250 200 150 100 Collector current ...

Page 5

BSM 50 GD 120 DN2G Typ. output characteristics parameter µ ° 100 A 17V 15V 80 I 13V C 11V ...

Page 6

BSM 50 GD 120 DN2G Typ. gate charge Gate parameter puls 600 120 ...

Page 7

BSM 50 GD 120 DN2G Typ. switching time inductive load , T = 125° par 600 ± ...

Page 8

BSM 50 GD 120 DN2G Forward characteristics of fast recovery I = f(V ) reverse diode F F parameter 100 =125° 0.0 0.5 1.0 ...

Page 9

BSM 50 GD 120 DN2G Package Outlines Dimensions in mm Weight: 300 g Circuit Diagram 9 Oct-01-2003 ...

Page 10

Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit dieses Produkte s für die von Ihnen anvisierte Anwendung sowie die Beurteilung der Vollständigkeit der bereitgestellten Produktdaten für diese Anwendung obliegt Ihnen ...

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