BSM200GD60DLC Infineon Technologies, BSM200GD60DLC Datasheet

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BSM200GD60DLC

Manufacturer Part Number

BSM200GD60DLC

Description

IGBT Modules 600V 200A 3-PHASE

Manufacturer

Infineon Technologies

Datasheet

1.BSM200GD60DLC.pdf (9 pages)

Specifications of BSM200GD60DLC

Configuration

Hex

Collector- Emitter Voltage Vceo Max

600 V

Collector-emitter Saturation Voltage

2.45 V

Continuous Collector Current At 25 C

226 A

Gate-emitter Leakage Current

400 nA

Power Dissipation

700 W

Maximum Operating Temperature

+ 125 C

Maximum Gate Emitter Voltage

+/- 20 V

Minimum Operating Temperature

- 40 C

Mounting Style

Screw

Package / Case

EconoPACK 3A

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

BSM200GD60DLC

Manufacturer:

EUPEC

Quantity:

25

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

BSM200GD60DLC

Manufacturer:

EUPEC

Quantity:

530

Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

BSM200GD60DLC

Manufacturer:

INFINEON/英飞凌

Quantity:

20 000

Company:

HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED

HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED

Part Number:

BSM200GD60DLC

Quantity:

50

Current page: 1 of 9
Download datasheet (137Kb)

Kollektor-Emitter-Sperrspannung

collector-emitter voltage

Kollektor-Dauergleichstrom

DC-collector current

Periodischer Kollektor Spitzenstrom

repetitive peak collector current

Gesamt-Verlustleistung

total power dissipation

Gate-Emitter-Spitzenspannung

gate-emitter peak voltage

Dauergleichstrom

DC forward current

Periodischer Spitzenstrom

repetitive peak forw. current

Grenzlastintegral der Diode

I

Isolations-Prüfspannung

insulation test voltage

Kollektor-Emitter Sättigungsspannung

collector-emitter saturation voltage

Gate-Schwellenspannung

gate threshold voltage

Eingangskapazität

input capacitance

Rückwirkungskapazität

reverse transfer capacitance

Kollektor-Emitter Reststrom

collector-emitter cut-off current

Gate-Emitter Reststrom

gate-emitter leakage current

prepared by: Andreas Vetter

approved by: Michael Hornkamp

IGBT-Module

IGBT-Modules

Höchstzulässige Werte / Maximum rated values

Elektrische Eigenschaften / Electrical properties

Charakteristische Werte / Characteristic values

Transistor / Transistor

Technische Information / Technical Information

2

t - value, Diode

T

T

t

T

t

V

RMS, f= 50Hz, t= 1min.

I

I

I

f= 1MHz, T

f= 1MHz, T

V

V

V

date of publication: 2000-04-26

revision: 1

BSM 200 GD 60 DLC

P

P

C

C

C

C

C

C

R

CE

CE

CE

= 1ms, T

= 1ms

= 200A, V

= 200A, V

= 4,0mA, V

= 45°C

= 25°C

= 25°C, Transistor

= 0V, t

= 600V, V

= 600V, V

= 0V, V

p

= 10ms, T

C

GE

vj

vj

= 45°C

GE

GE

= 25°C, V

= 25°C, V

CE

= 20V, T

GE

GE

= 15V, T

= 15V, T

= V

= 0V, T

= 0V, T

GE

1 (8)

Vj

, T

= 125°C

vj

CE

CE

vj

vj

= 25°C

vj

vj

vj

= 25°C

= 125°C

= 25°C

= 25V, V

= 25V, V

= 25°C

= 125°C

GE

GE

= 0V

= 0V

V

V

I

V

V

V

C,nom.

I

I

C

I

P

C

I

CRM

CE sat

GE(th)

FRM

CES

GES

GES

I

ISOL

CES

I

I

2

C

F

res

tot

ies

t

min.

4,5

-

-

-

-

-

-

-

+/- 20V

8.450

typ.

1,95

2,20

600

200

226

400

700

200

400

2,5

5,5

0,8

BSM 200 GD 60 DLC S1

9

1

1

-

max.

2,45

500

400

6,5

2000-02-08

-

-

-

-

A

mA

kV

nF

nF

µA

nA

W

V

A

A

A

V

A

A

V

V

V

2

s

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