BSM35GD120DN2 Infineon Technologies, BSM35GD120DN2 Datasheet

IGBT Modules 1200V 35A 3-PHASE

BSM35GD120DN2

Manufacturer Part Number
BSM35GD120DN2
Description
IGBT Modules 1200V 35A 3-PHASE
Manufacturer
Infineon Technologies
Datasheet

Specifications of BSM35GD120DN2

Configuration
Hex
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2.7 V
Continuous Collector Current At 25 C
50 A
Gate-emitter Leakage Current
150 nA
Power Dissipation
280 W
Maximum Operating Temperature
+ 150 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
EconoPACK 2
Channel Type
N
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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BSM 35 GD 120 DN2
IGBT Power Module
• Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
Type
BSM 35 GD 120 DN2
BSM35GD120DN2E3224
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
Gate-emitter voltage
DC collector current
T
T
Pulsed collector current, t
T
T
Power dissipation per IGBT
T
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
C
C
C
C
C
GE
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
= 20 k
p
= 1 ms
V
1200V 50A
1200V 50A
CE
I
C
1
Package
ECONOPACK 2
ECONOPACK 2K
V
V
I
I
P
T
T
R
R
V
-
-
-
-
Symbol
V
C
Cpuls
CE
CGR
GE
tot
j
stg
is
thJC
thJCD
40 / 125 / 56
-40 ... + 125
Values
Ordering Code
C67076-A2506-A67
C67070-A2506-A67
+ 150
± 20
1200
1200
2500
100
280
0.44
F
50
35
70
16
11
0.8
2006-01-31
Unit
V
A
W
°C
K/W
Vac
mm
sec

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BSM35GD120DN2 Summary of contents

Page 1

... BSM 35 GD 120 DN2 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 35 GD 120 DN2 BSM35GD120DN2E3224 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Gate-emitter voltage DC collector current ° ...

Page 2

BSM 35 GD 120 DN2 Electrical Characteristics Parameter Static Characteristics Gate threshold voltage 1 CE, C Collector-emitter saturation voltage °C ...

Page 3

BSM 35 GD 120 DN2 Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 600 Gon Rise time V = 600 V, ...

Page 4

BSM 35 GD 120 DN2 Power dissipation = ( tot C parameter: T 150 °C j 300 W 260 240 P tot 220 200 180 160 140 120 100 ...

Page 5

BSM 35 GD 120 DN2 Typ. output characteristics parameter µ ° 17V 15V I 55 13V C 11V ...

Page 6

BSM 35 GD 120 DN2 Typ. gate charge = ( Gate parameter puls 600 Reverse ...

Page 7

BSM 35 GD 120 DN2 Typ. switching time inductive load , T = 125° par 600 ± ...

Page 8

BSM 35 GD 120 DN2 Forward characteristics of fast recovery I = f(V ) reverse diode F F parameter =125° ...

Page 9

BSM 35 GD 120 DN2 Gehäusemaße / Schaltbild Package outline / Circuit diagramm 9 2006-01-31 ...

Page 10

Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit dieses Produktes für die von Ihnen anvisierte Anwendung sowie die Beurteilung der Vollständigkeit der bereitgestellten Produktdaten für diese Anwendung obliegt Ihnen bzw. ...

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