BSM100GB170DLC Infineon Technologies, BSM100GB170DLC Datasheet

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BSM100GB170DLC

Manufacturer Part Number
BSM100GB170DLC
Description
IGBT Modules 1700V 100A DUAL
Manufacturer
Infineon Technologies
Datasheet
1.BSM100GB170DLC.pdf (9 pages)

Specifications of BSM100GB170DLC

Configuration
Dual
Collector- Emitter Voltage Vceo Max
1700 V
Collector-emitter Saturation Voltage
2.6 V
Continuous Collector Current At 25 C
200 A
Gate-emitter Leakage Current
200 nA
Power Dissipation
960 W
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
62MM
Channel Type
N
Collector-emitter Voltage
1.7kV
Collector Current (dc) (max)
200A
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Ic (max)
100.0 A
Vce(sat) (typ)
2.6 V
Technology
IGBT2 Low Loss
Housing
62 mm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
BSM100GB170DLC
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED
Part Number:
BSM100GB170DLC
Quantity:
50
Company:
H&T Electronics H&T Electronics
Part Number:
BSM100GB170DLC
Quantity:
200
IGBT-Module
IGBT-Modules
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collctor current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral der Diode
I
Isolations-Prüfspannung
insulation test voltage
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Gateladung
gate charge
Eingangskapazität
input capacitance
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
prepared by: Regine Mallwitz
approved by: Christoph Lübke; 28.11.2000
Technische Information / Technical Information
2
t - value, Diode
T
T
t
T
tp = 1 ms
V
RMS, f = 50 Hz, t = 1 min.
I
I
I
V
f = 1MHz,T
f = 1MHz,T
V
V
V
date of publication: 28.11.2000
revision: 2 (Series)
BSM 100 GB 170 DLC
P
C
C
C
C
C
C
R
GE
CE
CE
CE
= 1 ms, T
= 100A, V
= 100A, V
= 5mA, V
=25°C, Transistor
= 80 °C
= 25 °C
= 0V, t
= 1700V, V
= 1700V, V
= 0V, V
= -15V ... +15V
p
= 10ms, T
vj
vj
CE
GE
C
GE
GE
=80°C
= 25°C,V
= 25°C,V
= V
= 20V, T
= 15V, T
= 15V, T
GE
GE
GE
= 0V, T
= 0V, T
1(8)
, T
Vj
CE
CE
vj
vj
= 125°C
vj
vj
= 25°C
= 25°C
= 25V, V
= 25V, V
= 25°C
= 125°C
vj
vj
= 25°C
= 125°C
GE
GE
= 0V
= 0V
V
V
I
V
V
V
C,nom.
I
I
C
C
I
I
P
CRM
CE sat
GE(th)
Q
FRM
CES
GES
ISOL
GES
I
CES
I
I
C
2
tot
F
ies
res
G
t
min.
4,5
-
-
-
-
-
-
-
-
+/- 20V
2.800
1700
typ.
0,05
100
200
200
960
100
200
3,4
2,6
3,1
5,5
1,2
0,3
7
3
-
BSM100GB170DLC
max.
200
3,2
3,6
6,5
0,2
-
-
-
A
µC
mA
mA
nF
nF
nA
W
kV
V
A
A
A
V
A
A
V
V
V
2
s

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BSM100GB170DLC Summary of contents

Page 1

... V 1700 V CES I 100 A C,nom. I 200 200 A CRM P 960 W tot V +/- 20V V GES I 100 200 A FRM 2 2 2.800 3,4 kV ISOL min. typ. max 2,6 3 sat - 3,1 3 4,5 5,5 6,5 V GE(th 1,2 - µ ies res I - 0,05 0,2 mA CES - 200 nA GES BSM100GB170DLC ...

Page 2

... mWs mWs off I - 400 - sCE CC’+EE’ min. typ. max 2,1 2 2,1 2 105 - µ µ mWs rec - 20 - mWs BSM100GB170DLC ...

Page 3

... BSM 100 GB 170 DLC Transistor / transistor, DC Diode/Diode, DC pro Modul / per Module d 50µ 50µm Paste grease terminals M6 3(8) min. typ. max 0,13 K/W thJC - - 0,28 K 0,012 K/W thCK 150 ° -40 - 125 ° -40 - 125 °C stg max max 420 g BSM100GB170DLC ...

Page 4

... VGE = 15V 160 VGE = 13V VGE = 11V 140 VGE = 9V 120 100 0,0 0,5 1,0 BSM 100 GB 170 DLC 15V GE 1,5 2,0 2,5 3,0 3 1,5 2,0 2,5 3,0 3,5 V [ 25° 125°C 4,0 4,5 5 125°C vj 4,0 4,5 5,0 BSM100GB170DLC ...

Page 5

... Durchlaßkennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) 220 200 180 160 140 120 100 0,0 0,5 BSM 100 GB 170 DLC 25° 125° [ 25° 125°C 1,0 1,5 V [ 20V 2,0 2,5 3,0 BSM100GB170DLC ...

Page 6

... Eon 160 Erec 140 120 100 Schaltverluste (typisch) Switching losses (typical) 120 100 BSM 100 GB 170 DLC off = 900V, T gon goff 100 120 140 I [ 100A , V = 900V , Eoff Eon Erec 6( rec C = 125°C j 160 180 200 220 = off G rec G = 125° BSM100GB170DLC ...

Page 7

... IC,Modul IC,Chip 150 100 200 400 (t) thJC Zth:Diode Zth:IGBT 0 [sec 14,51 41,96 62,52 0,0047 0,036 0,061 52,12 103,26 103,26 0,0062 0,0473 0,0473 Ohm 600 800 1000 1200 V [V] CE 7(8) 10 100 4 11,01 0,467 21,27 0,2322 = 125°C vj 1400 1600 1800 BSM100GB170DLC ...

Page 8

... Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 100 GB 170 DLC 8(8) BSM100GB170DLC ...

Page 9

Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit dieses Produktes für die von Ihnen anvisierte Anwendung sowie die Beurteilung der Vollständigkeit der bereitgestellten Produktdaten für diese Anwendung obliegt Ihnen bzw. ...

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