SKB06N60 Infineon Technologies, SKB06N60 Datasheet
SKB06N60
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SKB06N60 Summary of contents
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... Operating junction and storage temperature Soldering temperature (reflow soldering, MSL1) 1 J-STD-020 and JESD-022 2 Allowed number of short circuits: <1000; time between short circuits: >1s. for target applications http://www.infineon.com/igbt Marking C CE(sat) j 2.3V K06N60 150 C jmax 600V, T 150 C j jmax 1 SKB06N60 PG-TO-263-3-2 Package PG-TO-263-3-2 Symbol Value V 600 6 ...
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... C, unless otherwise specified Symbol Conditions (one layer thick) copper area for 2 SKB06N60 Max. Value 1.85 3.5 40 Value min. Typ. max. 600 - = 1.7 2.0 2.4 - 2.3 2.8 1.2 1.4 1.8 - 1.25 1. 700 = 100 = 4.2 - 350 420 - Rev. 2.2 Unit K/W Unit - Oct. 07 ...
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... C j Symbol Conditions Energy losses include E “tail” and diode reverse recovery SKB06N60 Value Unit min. typ. max 220 264 - 0.110 0.127 mJ - 0.105 0.137 - 0.215 0.263 - 200 - 183 - - 200 - 180 - A/ s Value Unit min. typ. max 248 298 - ...
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... 10A 1A 0.1A 100kHz COLLECTOR CE Figure 2. Safe operating area ( 10A 5A 0A 125°C 25°C Figure 4. Collector current as a function of case temperature (V 15V SKB06N60 200 s 1ms DC 10V 100V 1000V - EMITTER VOLTAGE = 150 50°C 75°C 100°C 125° CASE TEMPERATURE C 150 C) j Rev ...
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... V CE Figure 6. Typical output characteristics (T = 150 C) j 4.0V 3.5V -55°C 3.0V 2.5V 2.0V 1.5V 1.0V 8V 10V -50°C Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V = 15V SKB06N60 =20V GE 15V 13V 11V COLLECTOR EMITTER VOLTAGE I = 12A 0°C 50°C 100°C 150°C ...
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... 0/+15V Dynamic test circuit in Figure E) 5.5V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0V 150°C -50°C Figure 12. Gate-emitter threshold voltage as a function of junction temperature = 0/+15V 0.25mA SKB06N60 t d(off d(on 100 150 R , GATE RESISTOR G = 150 400V 6A, C max. 0°C 50° ...
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... E off 0.0mJ 12A 15A 0 Figure 14. Typical switching energy losses as a function of gate resistor = 400V, (inductive load 0/+15V Dynamic test circuit in Figure off 150°C = 0/+15V, 7 SKB06N60 and E include losses off 100 150 R , GATE RESISTOR G = 150 400V 6A, C Rev. 2.2 Oct. 07 ...
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... GE 100A 80A 60A 40A 20A 0A 14V 15V 10V 12V V GE Figure 19. Typical short circuit collector current as a function of gate-emitter voltage (V 600V SKB06N60 C iss C oss C rss 10V 20V 30V - EMITTER VOLTAGE 14V 16V 18V 20V , - GATE EMITTER VOLTAGE = 150 C) j Rev ...
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... Figure 23. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (V = 200V Dynamic test circuit in Figure E) 9 SKB06N60 I = 12A DIODE CURRENT SLOPE = 125 C, j 150A/ s 250A/ s 350A/ s 450A/ s 550A/ s /dt, DIODE CURRENT SLOPE ...
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... K/W 0. 7.25*10 -3 6.44*10 -4 0.01 7.13* K/W -5 7.16* K/W 1µs 10ms 100ms 1s Figure 27. IGBT transient thermal impedance as a function of pulse width ( SKB06N60 I = 12A 0°C 40°C 80°C 120° JUNCTION TEMPERATURE j D=0.5 0.2 0 0.705 0.0341 0.561 3.74E-3 0.583 3.25E single pulse 10µs 100µs ...
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... PG-TO263-3-2 11 SKB06N60 Rev. 2.2 Oct. 07 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses SKB06N60 i Figure C. Definition of diodes switching characteristics ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Stray capacity =180nH =250pF. Rev. 2.2 Oct. 07 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. SKB06N60 13 Rev. 2.2 Oct. 07 ...