FF200R12KE3 Infineon Technologies

FF200R12KE3

Manufacturer Part Number

FF200R12KE3

Description

IGBT Transistors 1200V 200A DUAL

Manufacturer

Infineon Technologies

Specifications of FF200R12KE3

Configuration

Dual

Collector- Emitter Voltage Vceo Max

1200 V

Collector-emitter Saturation Voltage

1.7 V

Maximum Gate Emitter Voltage

+/- 20 V

Continuous Collector Current At 25 C

200 A

Gate-emitter Leakage Current

400 nA

Power Dissipation

1.05 KW

Maximum Operating Temperature

+ 125 C

Package / Case

IS5a ( 62 mm )-7

Minimum Operating Temperature

- 40 C

Mounting Style

Screw

Channel Type

Collector-emitter Voltage

1.2kV

Gate To Emitter Voltage (max)

±20V

Mounting

Screw

Operating Temperature (min)

-40C

Operating Temperature (max)

125C

Operating Temperature Classification

Automotive

Ic (max)

200.0 A

Vce(sat) (typ)

1.7 V

Technology

IGBT3

Housing

62 mm

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FF200R12KE3

Manufacturer:

EUPEC

Quantity:

Company:

Meier Automation Equipment Co., Limited

Part Number:

FF200R12KE3

Manufacturer:

INFINEON/英飞凌

Quantity:

20 000

Company:

H&T Electronics

Part Number:

FF200R12KE3

Quantity:

120

Company:

HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED

Part Number:

FF200R12KE3G

Quantity:

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