SGB04N60 Infineon Technologies, SGB04N60 Datasheet

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SGB04N60

Manufacturer Part Number
SGB04N60
Description
IGBT Transistors FAST IGBT NPT TECH 600V 4A
Manufacturer
Infineon Technologies
Datasheet

Specifications of SGB04N60

Configuration
Single
Collector- Emitter Voltage Vceo Max
600 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 150 C
Package / Case
TO-263-3
Continuous Collector Current Ic Max
9.4 A
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Switching Frequency
Fast IGBT 10-40 kHz
Package
D2PAK (TO-263)
Vce (max)
600.0 V
Ic(max) @ 25°
9.4 A
Ic(max) @ 100°
4.9 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SGB04N60
Manufacturer:
INFINEON
Quantity:
12 500
Fast IGBT in NPT-technology
Type
SGB04N60
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T
T
Pulsed collector current, t
Turn off safe operating area
V
Gate-emitter voltage
Avalanche energy, single pulse
I
start at T
Short circuit withstand time
V
Power dissipation
T
Operating junction and storage temperature
Soldering temperature: (reflow soldering, MSL1)
2
1)
C
C
C
C
J-STD-020 and JESD-022
CE
GE
75% lower E
Short circuit withstand time – 10 s
Designed for:
NPT-Technology for 600V applications offers:
Qualified according to JEDEC
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models :
Allowed number of short circuits: <1000; time between short circuits: >1s.
= 4 A, V
= 25 C
= 100 C
= 25 C
= 15V, V
600V, T
- Motor controls
- Inverter
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
combined with low conduction losses
j
= 25 C
CC
CC
= 50 V, R
j
off
compared to previous generation
150 C
600V, T
600V
V
GE
CE
j
p
= 25
limited by T
1)
150 C
4A
2
I
C
,
for target applications
jmax
V
CE(sat)150°C
2.3V
http://www.infineon.com/igbt/
150 C
1
T
j
Marking
G04N60
Symbol
V
I
I
-
V
E
t
P
T
T
C
C p u l s
S C
j
s
C E
G E
A S
t o t
, T
s t g
PG-TO-263-3-2
Package
-55...+150
SGB04N60
Value
600
245
9.4
4.9
19
19
25
10
50
20
Rev. 2.3
PG-TO-263-3-2 (D²-PAK)
(TO-263AB)
G
Unit
V
A
V
mJ
W
C
E
C
s
Nov 06

Related parts for SGB04N60

SGB04N60 Summary of contents

Page 1

... Soldering temperature: (reflow soldering, MSL1) 2 J-STD-020 and JESD-022 1) Allowed number of short circuits: <1000; time between short circuits: >1s. for target applications http://www.infineon.com/igbt Marking C CE(sat)150°C j 2.3V G04N60 150 C jmax , 1 SGB04N60 G PG-TO-263-3-2 (D²-PAK) (TO-263AB) Package PG-TO-263-3-2 Symbol Value V 600 9.4 4 ...

Page 2

... Allowed number of short circuits: <1000; time between short circuits: >1s. Symbol Conditions unless otherwise specified Symbol Conditions (one layer thick) copper area for 2 SGB04N60 Max. Value 2 Value min. Typ. max. 600 - = 1.7 2.0 2.4 - 2.3 2 500 = 100 = 4 A 3.1 - 264 317 - Rev. 2.3 Unit K/W Unit - Nov 06 ...

Page 3

... =150 C j Symbol Conditions Energy losses include E “tail” and diode reverse recovery SGB04N60 Value Unit min. typ. max 237 284 - 0.070 0.081 mJ - 0.061 0.079 - 0.131 0.160 Value Unit min. typ. max 264 317 - 104 125 - 0 ...

Page 4

... I c 10A 1A 0.1A 0.01A 1V 100kHz V CE Figure 2. Safe operating area ( 12A 10A 25°C 125°C Figure 4. Collector current as a function of case temperature (V 15V SGB04N60 200 s 1ms DC 10V 100V 1000V , - COLLECTOR EMITTER VOLTAGE = 150 50°C 75°C 100°C 125° CASE TEMPERATURE ...

Page 5

... V CE Figure 6. Typical output characteristics (T = 150 C) j 4.0V 3.5V -55°C 3.0V 2.5V 2.0V 1.5V 1.0V 8V 10V -50°C Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V = 15V SGB04N60 =20V GE 15V 13V 11V COLLECTOR EMITTER VOLTAGE 0°C 50°C 100°C 150° JUNCTION TEMPERATURE j Rev ...

Page 6

... V = 0/+15V Dynamic test circuit in Figure E) 5.5V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0V 150°C -50°C Figure 12. Gate-emitter threshold voltage as a function of junction temperature = 0/+15V 0.2mA SGB04N60 d(on) 50 100 150 200 R , GATE RESISTOR G = 150 400V 4A, C 0°C 50°C 100°C 150° ...

Page 7

... I GE Dynamic test circuit in Figure E) D=0 K/W 0.2 0.1 0. K/W 0. K/W 150°C 1µs Figure 16. IGBT transient thermal impedance as a function of pulse width = 0/+15V SGB04N60 and E include losses off 100 150 200 R , GATE RESISTOR G = 150 400V 4A 0.815 0.0407 ...

Page 8

... GE 70A 60A 50A 40A 30A 20A 10A 0A 14V 15V 10V 12V V GE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (V 600V SGB04N60 C iss C oss C rss 10V 20V 30V - EMITTER VOLTAGE 14V 16V 18V 20V , - GATE EMITTER VOLTAGE = 150 C) j Rev ...

Page 9

... PG-TO263-3-2 9 SGB04N60 Rev. 2.3 Nov 06 ...

Page 10

... Figure A. Definition of switching times Figure B. Definition of switching losses Published by Infineon Technologies AG, SGB04N60 ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Stray capacity =180nH =180pF. Rev. 2.3 Nov 06 ...

Page 11

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. SGB04N60 11 Rev. 2.3 Nov 06 ...

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