HGTG30N60B3D_Q Fairchild Semiconductor
HGTG30N60B3D_Q
Manufacturer Part Number
HGTG30N60B3D_Q
Description
IGBT Transistors 600V IGBT UFS N-Channel
Manufacturer
Fairchild Semiconductor
Specifications of HGTG30N60B3D_Q
Configuration
Single
Collector- Emitter Voltage Vceo Max
600 V
Collector-emitter Saturation Voltage
1.45 V
Maximum Gate Emitter Voltage
+/- 20 V
Continuous Collector Current At 25 C
60 A
Gate-emitter Leakage Current
+/- 250 nA
Power Dissipation
208 W
Maximum Operating Temperature
+ 150 C
Package / Case
TO-247-3
Continuous Collector Current Ic Max
60 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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