BZX884-B3V3,315 NXP Semiconductors, BZX884-B3V3,315 Datasheet - Page 6

• Manufacturer Part Number: BZX884-B3V3,315
• Description: DIODE ZENER 3.3V 250MW SOD882
• Manufacturer: NXP Semiconductors

Specifications of BZX884-B3V3,315

• Package / Case: SOD-882
• Voltage - Zener (nom) (vz): 3.3V
• Voltage - Forward (vf) (max) @ If: 900mV @ 10mA
• Current - Reverse Leakage @ Vr: 5µA @ 1V
• Tolerance: ±2%
• Power - Max: 250mW
• Impedance (max) (zzt): 95 Ohm
• Mounting Type: Surface Mount
• Operating Temperature: -65°C ~ 150°C
• Zener Voltage: 3.3 V
• Voltage Tolerance: 2 %
• Voltage Temperature Coefficient: - 1.8 mV / K
• Power Dissipation: 250 mW
• Maximum Reverse Leakage Current: 5 uA
• Maximum Zener Impedance: 95 Ohms
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934057187315; BZX884-B3V3 T/R; BZX884-B3V3 T/R

Table 2 Per type BZX884-B/C27 to B/C75
T
BZX884-
27
30
33
36
39
43
47
51
56
62
68
75
j
B or C
= 25 °C unless otherwise specified.
XXX
26.46
29.40
32.34
35.28
38.22
42.14
46.06
49.98
54.88
60.76
66.64
73.50
Tol. ±2% (B)
MIN.
WORKING VOLTAGE
27.54
30.60
33.66
36.72
39.78
43.86
47.94
52.02
57.12
63.24
69.36
76.50
MAX.
at I
V
Z
Z
= 2 mA
(V)
25.65
28.50
31.35
34.20
37.05
40.85
44.65
48.45
53.20
58.90
64.60
71.25
Tol. ±5% (C)
MIN.
28.35
31.50
34.65
37.80
40.95
45.15
49.35
53.55
58.80
65.10
71.40
78.75
MAX.
at I
65
70
75
80
80
85
85
90
100
120
150
170
TYP.
DIFFERENTIAL RESISTANCE
Ztest
= 0.5 mA
300
300
325
350
350
375
375
400
425
450
475
500
MAX.
r
dif
(Ω)
25
30
35
35
40
45
50
60
70
80
90
95
at I
TYP.
Ztest
= 2 mA
80
80
80
90
130
150
170
180
200
215
240
255
MAX.
23.4
26.6
29.7
33.0
36.4
41.2
46.1
51.0
57.0
64.4
71.7
80.2
(see Figs 3 and 4)
TEMP. COEFF.
at I
S
Ztest
Z
TYP.
(mV/K)
= 2 mA
50
50
45
45
45
40
40
40
40
35
35
35
at f = 1 MHz;
DIODE CAP.
V
C
R
MAX.
d
= 0 V
(pF)
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.3
0.25
0.2
NON-REPETITIVE PEAK
I
REVERSE CURRENT
ZSM
(A) at t
T
amb
MAX.
= 25 °C
p
= 100 μs;