ADL5371ACPZ-R7 Analog Devices Inc, ADL5371ACPZ-R7 Datasheet - Page 14

• Manufacturer Part Number: ADL5371ACPZ-R7
• Description: IC,RF Modulator,LLCC,24PIN,PLASTIC
• Manufacturer: Analog Devices Inc

Specifications of ADL5371ACPZ-R7

• Design Resources: Interfacing ADL5371 to AD9779A Dual-Channel, 1 GSPS High Speed DAC (CN0017)
• Function: Modulator
• Lo Frequency: 500MHz ~ 1.5GHz
• Rf Frequency: 500MHz ~ 1.5GHz
• P1db: 14.4dBm
• Noise Floor: -158.6dBm/Hz
• Output Power: 7.6dBm
• Current - Supply: 200mA
• Voltage - Supply: 4.75 V ~ 5.25 V
• Test Frequency: 900MHz
• Package / Case: 24-VFQFN, 24-CSP Exposed Pad
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ADL5371ACPZ-R7TR

ADL5371
Figure 30 shows an example of a third-order elliptical filter
with a 3 dB frequency of 3 MHz. Matching input and output
impedances makes the filter design easier, so the shunt resistor
chosen is 100 Ω, producing an ac swing of 1 V p-p differential.
USING THE AD9779 AUXILIARY DAC FOR CARRIER
FEEDTHROUGH NULLING
The
inject small currents into the differential outputs for each main
DAC channel. This feature can be used to produce the small
offset voltages necessary to null out the carrier feedthrough
from the modulator. Figure 31 shows the interface required
to use the auxiliary DACs. This adds four resistors to the
interface.
Figure 30. DAC Modulator Interface with 3 MHz Third-Order, Low-Pass Filter
AD9779
AD9779
OUT1_P
OUT1_N
OUT2_N
OUT2_P
AUX1_P
OUT1_P
OUT1_N
AUX1_N
AUX2_N
OUT2_N
OUT2_P
AUX2_P
AD9779
Figure 31. DAC Modulator Interface with Auxiliary DAC Resistors
92
92
93
90
500Ω
93
500Ω
500Ω
84
83
89
500Ω
87
84
83
86
features an auxiliary DAC that can be used to
RBQN
RBQN
RBQP
RBQP
RBIN
RBIN
RBIP
RBIP
50Ω
50Ω
50Ω
50Ω
50Ω
50Ω
50Ω
50Ω
250Ω
250Ω
250Ω
250Ω
1.1nF
1.1nF
1.1nF
1.1nF
C1Q
C1Q
C1I
C1I
2.7nH
2.7nH
2.7nH
2.7nH
2.7nH
2.7nH
2.7nH
2.7nH
LNQ
LNQ
LPQ
LPQ
LPI
LNI
LPI
LNI
1.1nF
1.1nF
1.1nF
1.1nF
C2Q
C2Q
C2I
C2I
RSLQ
RSLQ
100Ω
100Ω
100Ω
100Ω
RSLI
RSLI
23
24
23
24
19
20
19
20
QBBN
QBBP
QBBN
QBBP
IBBP
IBBN
IBBP
IBBN
F-MOD
F-MOD
Rev. 0 | Page 14 of 20
GSM OPERATION
Figure 32 shows the GSM/EDGE EVM and spectral mask
performance vs. output power for the ADL5371 at 940 MHz.
For a given LO amplitude, the performance is independent of
output power.
Figure 33 shows the GSM/EDGE EVM and 6 MHz offset noise
vs. LO amplitude at 940 MHz with an output power of 5 dBm.
Increasing the LO drive level improves the noise performance
with minimal degradation in EVM performance.
Figure 33 illustrates that an LO amplitude of 3 dBm provides
the ideal operating point for noise and EVM for a GSM/EDGE
signal at 940 MHz.
Figure 33. GSM/EDGE (8 PSK) EVM, Spectral Performance, and 6 MHz Noise
Figure 32. GSM/EDGE (8 PSK) EVM and Spectral Performance vs. Channel
–100
–105
–110
–115
–120
–125
–130
–90
–95
–100
–110
–30
–40
–50
–60
–70
–80
–90
–6
Power at 940 MHz vs. Output Power; LO Power = 0 dBm
–6
Floor vs. LO Power at 940 MHz; Output Power = 5 dBm
6MHz NOISE FLOOR
–4
EVM RMS (%)
–4
6MHz NOISE FLOOR
250kHz
400kHz
EVM RMS (%)
–2
EVM PEAK (%)
OUTPUT POWER (dBm)
–2
LO DRIVE (dBm)
1200kHz
0
0
600kHz
EVM PEAK (%)
2
2
4
4
6
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
6
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0