CY62136EV30LL-45BVXIT Cypress Semiconductor Corp, CY62136EV30LL-45BVXIT Datasheet - Page 14

CY62136EV30LL-45BVXIT

CY62136EV30LL-45BVXIT

Manufacturer Part Number
CY62136EV30LL-45BVXIT
Description
CY62136EV30LL-45BVXIT
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY62136EV30LL-45BVXIT

Format - Memory
RAM
Memory Type
SRAM
Memory Size
2M (128K x 16)
Speed
45ns
Interface
Parallel
Voltage - Supply
2.2 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY62136EV30LL-45BVXIT
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Document History Page
Document #: 38-05569 Rev. *D
Document Title: CY62136EV30 MoBL
Document Number: 38-05569
Rev.
*A
*B
*C
*D
**
ECN No.
2604685
3144174
237432
419988
427817
VKN/PYRS
Change
Orig. of
RAME
RXU
NXR
AJU
Submission
01/17/2011 Added
See ECN
See ECN
See ECN
11/12/08
®
Date
2-Mbit (128K x 16) Static RAM
New Data Sheet
Converted from Advanced Information to Final.
Changed the address of Cypress Semiconductor Corporation on Page #1
from “3901 North First Street” to “198 Champion Court”
Removed 35ns Speed Bin
Removed “L” version of CY62136EV30
Changed I
1.5 mA to 2 mA at f=1 MHz
Changed I
Changed I
2.5 A to 7 A.
Changed the AC test load capacitance from 50pF to 30pF on Page# 4
Changed V
Changed I
Added I
Changed t
Changed t
Changed t
Changed t
Changed t
Changed t
Changed t
Corrected typo in the Truth Table on Page# 9
Updated the package diagram 48-pin VFBGA from *B to *D
Updated the ordering Information table and replaced the Package Name
column with Package Diagram.
Minor change: Moved datasheet to external web
Added footnote 8 related to I
Added footnote 12 related to AC timing parameters
Added
Update
Converted all tablenotes into footnotes
Added TOC
Updated datasheet as per new template.
Description of Change
Acronyms
Ordering Code Definition
CCDR
Package Diagrams
SB1
CC
CC
CCDR
OHA ,
LZBE
LZOE
HZOE,
SCE,
PWE
SD
DR
typical value.
from 20 ns to 25 ns
(Max) value from 2 mA to 2.5 mA and I
(Typ) value from 12 mA to 15 mA at f = f
and I
from 1.5V to 1V on Page# 4.
t
from 30 ns to 35 ns
AW and
t
from 6 ns to 5 ns
from 3 ns to 5 ns
LZCE
from 2.5 A to 3 A.
t
HZCE,
and
SB2
and t
t
Units of Measure
BW
Typ. values from 0.7 A to 1 A and Max. values from
t
HZBE
LZWE
from 40 ns to 35 ns
51-85150 from *D to *F
SB2
and t
from 6 ns to 10 ns
and I
HZWE
CCDR
from 15 ns to 18 ns
table
CY62136EV30 MoBL
CC
max
(Typ) value from
Page 14 of 15
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