CY62136EV30LL-45BVXIT Cypress Semiconductor Corp, CY62136EV30LL-45BVXIT Datasheet - Page 5

CY62136EV30LL-45BVXIT

CY62136EV30LL-45BVXIT

Manufacturer Part Number
CY62136EV30LL-45BVXIT
Description
CY62136EV30LL-45BVXIT
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY62136EV30LL-45BVXIT

Format - Memory
RAM
Memory Type
SRAM
Memory Size
2M (128K x 16)
Speed
45ns
Interface
Parallel
Voltage - Supply
2.2 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY62136EV30LL-45BVXIT
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Thermal Resistance
Data Retention Characteristics
(Over the Operating Range)
Data Retention Waveform
Document #: 38-05569 Rev. *D
V
I
t
t
Notes
Parameter
CCDR
CDR
R
11. Tested initially and after any design or process changes that may affect these parameters.
12. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
13. Chip enable (CE) and byte enables (BHE and BLE) need to be tied to CMOS levels to meet the I
14. Full device operation requires linear V
15. BHE.BLE is the AND of both BHE and BLE. The chip can be deselected by either disabling the chip enable signals or by disabling both BHE and BLE.
DR
[14]
Parameter
[11]
[13]
JA
JC
V
CE
CC
[11]
Parameters
OUTPUT
Thermal resistance
(junction to ambient)
Thermal resistance
(junction to case)
INCLUDING
R
V
R1
R2
V
JIG AND
TH
TH
V
Data retention current
Chip deselect to data
retention time
Operation recovery time
SCOPE
CC
CC
Description
for data retention
30 pF
Description
R1
CC
ramp from V
[15]
V
R2
Figure 1. AC Test Loads and Waveforms
CC(min)
t
CDR
Still air, soldered on a 3 × 4.5 inch, two-layer printed
circuit board
DR
V
CE > V
V
Rise Time = 1 V/ns
CC
IN
to V
2.50 V
16667
15385
8000
1.20
> V
= 1.0 V
CC(min.)
V
CC
CC
CC
GND
Equivalent to: THÉVENIN EQUIVALENT
– 0.2 V,
– 0.2 V or V
> 100 s or stable at V
DATA RETENTION MODE
Conditions
Test Conditions
10%
OUTPUT
V
DR
IN
> 1.0 V
< 0.2 V
ALL INPUT PULSES
90%
CC(min.)
3.0 V
1103
1554
1.75
645
SB1
> 100 s.
/ I
SB2
/ I
R
CCDR
TH
90%
specification. Other inputs can be left floating
Min
CC
1.0
45
10%
0
V
CY62136EV30 MoBL
= V
Fall Time = 1 V/ns
CC(min)
Package
V
t
CC(typ.)
VFBGA
R
TH
75
10
Typ
, T
0.8
A
= 25 °C
[12]
Unit
V
Package
TSOP II
77
13
Max
3
Page 5 of 15
C / W
C / W
Unit
Unit
A
ns
ns
V
®
[+] Feedback

Related parts for CY62136EV30LL-45BVXIT