CY62136EV30LL-45BVXIT Cypress Semiconductor Corp, CY62136EV30LL-45BVXIT Datasheet - Page 7

• Manufacturer Part Number: CY62136EV30LL-45BVXIT
• Description: CY62136EV30LL-45BVXIT
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY62136EV30LL-45BVXIT

• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 2M (128K x 16)
• Speed: 45ns
• Interface: Parallel
• Voltage - Supply: 2.2 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Switching Waveforms
Document #: 38-05569 Rev. *D
Notes
.
21. The device is continuously selected. OE, CE = V
22. WE is HIGH for read cycle.
23. Address valid prior to or coincident with CE and BHE, BLE transition LOW.
DATA OUT
CURRENT
DATA OUT
ADDRESS
ADDRESS
SUPPLY
BHE/BLE
V
CE
OE
CC
PREVIOUS DATA VALID
HIGH IMPEDANCE
t
PU
t
Figure 2. Read Cycle 1: Address Transition Controlled
LZCE
t
LZBE
t
t
ACE
LZOE
Figure 3. Read Cycle No. 2 : OE Controlled
t
DBE
IL
50%
t
OHA
, BHE and/or BLE = V
t
DOE
t
AA
t
RC
IL
.
t
RC
DATA VALID
[22, 23]
[21, 22]
DATA VALID
CY62136EV30 MoBL
t
HZBE
t
t
HZOE
HZCE
t
PD
50%
IMPEDANCE
HIGH
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