CY62136EV30LL-45ZSXIT Cypress Semiconductor Corp, CY62136EV30LL-45ZSXIT Datasheet - Page 4

CY62136EV30LL-45ZSXIT

CY62136EV30LL-45ZSXIT

Manufacturer Part Number
CY62136EV30LL-45ZSXIT
Description
CY62136EV30LL-45ZSXIT
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY62136EV30LL-45ZSXIT

Format - Memory
RAM
Memory Type
SRAM
Memory Size
2M (128K x 16)
Speed
45ns
Interface
Parallel
Voltage - Supply
2.2 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
44-TSOP II
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Maximum Ratings
Exceeding the maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage temperature ............................... –65 °C to + 150 °C
Ambient temperature with
power applied ......................................... –55 °C to + 125 °C
Supply voltage to ground
potential ........................... –0.3 V to 3.9 V (V
DC voltage applied to outputs
in High-Z state
Electrical Characteristics
Capacitance
Document #: 38-05569 Rev. *D
Notes
V
V
V
V
I
I
I
I
I
C
C
Parameter
5. V
6. V
7. Full Device AC operation assumes a 100 s ramp time from 0 to Vcc(min) and 200 s wait time after V
8. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
9. Chip enable (CE) and byte enables (BHE and BLE) need to be tied to CMOS levels to meet the I
10. Tested initially and after any design or process changes that may affect these parameters.
IX
OZ
CC
SB1
SB2
OH
OL
IH
IL
IN
OUT
Parameter
[9]
IL(min.)
IH(max)
[9]
=V
= –2.0 V for pulse durations less than 20 ns.
CC
Output HIGH voltage
Output LOW voltage
Input HIGH voltage
Input LOW voltage
Input leakage current
Output leakage current GND < V
V
current
Automatic CE
power-down current —
CMOS
inputs
Automatic CE
power-down current —
CMOS inputs
[10]
+0.75 V for pulse durations less than 20 ns.
CC
[5,6]
.............. –0.3 V to 3.9 V (V
operating supply
Input capacitance
Output capacitance
Description
Description
Over the Operating Range
I
I
I
I
V
V
V
V
GND < V
f = f
f = 1 MHz
CE > V
V
f = f
f = 0 (OE, and WE),
V
CE > V
V
V
OH
OH
OL
OL
CC
CC
CC
CC
IN
CC
IN
CC
>V
= 0.1 mA
= 2.1 mA
max
max
= –0.1 mA
= –1.0 mA
> V
= 2.7 V to 3.6 V
= 2.7 V to 3.6 V
= 2.2V to 2.7 V
= 2.2 V to 2.7 V
= 3.60 V
= 3.60 V
CC
CC MAX
CC MAX
CC
CC
CC
(address and data only),
= 1/t
–0.2 V, V
I
O
0.2 V,
T
V
< V
– 0.2 V,
– 0.2 V or V
< V
A
CC
RC
= 25 °C, f = 1 MHz,
CC
+ 0.3 V)
+ 0.3 V)
Test Conditions
CC
= V
, output disabled
V
V
V
V
V
CMOS levels
IN
CC(typ)
CC
CC
CC
CC
CC
<0.2 V)
= 2.20 V
= 2.70 V
= 2.20 V
= 2.70 V
= V
IN
< 0.2V, f = 0,
CCmax,
Test Conditions
DC input voltage
Output current into outputs (LOW) ............................. 20 mA
Static discharge voltage ......................................... > 2001 V
(per MIL-STD-883, Method 3015)
Latch up current ..................................................... > 200 mA
Operating Range
CY62136EV30LL Industrial
I
OUT
Device
= 0 mA
SB1
/ I
SB2
CC
[5,6]
stabilization.
/ I
........... –0.3 V to 3.9 V (V
CCDR
–0.3
–0.3
Range
Min
2.0
2.4
1.8
2.2
–1
–1
CC
specification. Other inputs can be left floating.
= V
CY62136EV30 MoBL
CC(typ.)
45 ns
Temperature
Typ
, T
–40 °C to
Ambient
15
2
1
1
+85 °C
A
Max
[8]
10
10
= 25 °C
V
V
CC MAX
CC
CC
Max
0.4
0.4
0.6
0.8
2.5
+1
+1
20
7
7
+ 0.3
+ 0.3
2.2 V - 3.6 V
Page 4 of 15
+ 0.3 V)
V
Unit
pF
pF
CC
Unit
mA
[7]
A
A
A
A
V
V
V
V
V
V
V
V
®
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