BR100/03,113 NXP Semiconductors, BR100/03,113 Datasheet
BR100/03,113
Manufacturer Part Number
BR100/03,113
Description
DIAC 32V 2A SOD27
Manufacturer
NXP Semiconductors
Datasheet
1.BR10003113.pdf
(3 pages)
Specifications of BR100/03,113
Package / Case
DO-204AH, DO-35, Axial
Current - Peak Output
2A
Voltage - Breakover
28 ~ 36V
Current - Breakover
50µA
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Hold (ih) (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-1767-2
933390460113
BR100/03 T/R
933390460113
BR100/03 T/R
Philips Semiconductors
GENERAL DESCRIPTION
Silicon bidirectional trigger device in a
glass envelope intended for use in
triac and thyristor trigger circuits.
OUTLINE - SOD27
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCES
CHARACTERISTICS
T
February 1996
Silicon Bi-directional Trigger Device
SYMBOL
I
P
T
T
SYMBOL
R
R
a
SYMBOL
V
|V
V
I
dV
t
FRM
(BO)
r
tot
stg
j
(BO)
O
= 25 ˚C unless otherwise stated.
th j-a
th j-lead
(BO)+
(BO)
/dT
| - |V
(BO)-
| Breakover voltage symmetry
PARAMETER
Repetitive peak forward
current
Total power dissipation
Storage temperature
Operating junction
temperature
PARAMETER
Thermal resistance junction to in free air
ambient
Thermal resistance junction to
leads
PARAMETER
Breakover voltage
Output voltage
Breakover current
Temperature coefficient of
V
Risetime
(BO)
QUICK REFERENCE DATA
SYMBOL
V
V
I
FRM
(BO)
O
CONDITIONS
t
T
CONDITIONS
CONDITIONS
I = I
I = I
R
V = V
I
p
a
L
= 0.5 A; Circuit of fig: 2
= 50˚C
= 20 ; Circuit of fig: 2
10 s, T
(BO)
(BO)
PARAMETER
Breakover voltage
Output voltage
Repetitive peak forward current
(BO)
, see fig: 1
1
a
50˚C; f = 60 Hz
SYMBOL
MIN.
MIN.
28
7
MIN.
-
-
-
-
-
-
-55
-
-
-
Product Specification
MIN.
TYP. MAX. UNIT
TYP. MAX. UNIT
330
150
28
0.1
1.5
7
32
-
-
-
-
MAX.
150
125
100
MAX.
BR100/03
2
3.5
36
36
50
2
-
-
-
-
-
Rev 1.100
UNIT
UNIT
K/W
K/W
mW
%/K
˚C
˚C
V
V
A
A
V
V
V
A
s
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BR100/03,113 Summary of contents
Page 1
Philips Semiconductors Silicon Bi-directional Trigger Device GENERAL DESCRIPTION Silicon bidirectional trigger device in a glass envelope intended for use in triac and thyristor trigger circuits. OUTLINE - SOD27 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC ...
Page 2
Philips Semiconductors Silicon Bi-directional Trigger Device I V(BO)III I(BO)III Fig.1. Current-voltage characteristics MECHANICAL DATA Dimensions in mm 1.95 max February 1996 10k I(BO)I V V(BO)I 230 V, RMS, 50Hz Fig.2. Test circuit for output voltage and risetime. 4.5 max 24 ...
Page 3
Philips Semiconductors Silicon Bi-directional Trigger Device DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This ...