BAV99WT1G Fairchild Semiconductor, BAV99WT1G Datasheet
BAV99WT1G
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BAV99WT1G Summary of contents
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... FR-4 board (3.0 × 4.5 × 0.062” by 1.0 × 0.5” land pads) Electrical Characteristics Symbol Parameter V Breakdown Voltage R V Forward Voltage F I Reverse Leakage R C Total Capacitance T t Reverse Recovery Time rr ©2005 Fairchild Semiconductor Corporation BAV99WT1G Rev 25°C unless otherwise noted a Parameter Parameter T = 25°C unless otherwise noted C Conditions I = 100µ 1.0mA F ...
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... Forward Voltage Drop, V Figure 3. Total Capacitance 1.80 1.78 1.75 1.73 1.70 1.68 1. Reverse Voltage, V BAV99WT1G Rev. A Figure 2. Reverse Current vs Reverse Voltage 1E-5 1E-6 1E-7 1E-8 0.8 1.0 1.2 [V] F Figure 4. Power Derating Curve 0.25 0.20 0.15 0.10 0.05 ...
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... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete BAV99WT1G Rev. A IntelliMAX™ POP™ ISOPLANAR™ Power247™ LittleFET™ PowerEdge™ MICROCOUPLER™ PowerSaver™ MicroFET™ ...