BAV99WT1G Fairchild Semiconductor, BAV99WT1G Datasheet

DIODE SWITCH SS DUAL 70V SOT323

BAV99WT1G

Manufacturer Part Number
BAV99WT1G
Description
DIODE SWITCH SS DUAL 70V SOT323
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of BAV99WT1G

Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Current - Reverse Leakage @ Vr
2.5µA @ 70V
Current - Average Rectified (io) (per Diode)
200mA
Voltage - Dc Reverse (vr) (max)
70V
Reverse Recovery Time (trr)
6ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Series Connection
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Product
Ultra Fast Recovery Rectifier
Configuration
Dual Series
Reverse Voltage
70 V
Forward Voltage Drop
1.25 V @ 0.15 A
Recovery Time
6 ns
Forward Continuous Current
0.2 A
Max Surge Current
2 A
Reverse Current Ir
2.5 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Dc
09+
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BAV99WT1GFSTR

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©2005 Fairchild Semiconductor Corporation
BAV99WT1G Rev. A
BAV99WT1G
Small Signal Diode
Absolute Maximum Ratings *
Thermal Characteristics
FR-4 board (3.0 × 4.5 × 0.062” by 1.0 × 0.5” land pads)
Electrical Characteristics
V
I
I
T
T
P
R
V
V
I
C
t
F(AV)
FSM
R
rr
STG
J
RRM
D
R
F
Symbol
Symbol
θJA
Symbol
T
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
Power Dissipation
Thermal Resistance, Junction to Ambient
Breakdown Voltage
Forward Voltage
Reverse Leakage
Total Capacitance
Reverse Recovery Time
SOT-323
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Parameter
Parameter
Parameter
T
C
= 25°C unless otherwise noted
T
a
= 25°C unless otherwise noted
1
I
I
I
I
I
V
V
V
V
I
R
R
F
F
F
F
F
FA
R
R
R
R
L
= 1.0mA
= 10mA
= 50mA
= 150mA
= I
= 100µA
= 100Ω
= 70V
= 25V, T
= 70V, T
= 0V, f = 1.0MHz
3
R
= 10mA, I
1
2
Conditions
A
A
= 150°C
= 150°C
RR
= 1.0mA,
-65 to +150
Connection Diagram
Value
Value
200
150
270
460
1.0
2.0
70
Min.
70
1
3
2
Max
1.25
715
855
1.0
2.5
2.0
6.0
50
70
www.fairchildsemi.com
Unit
Unit
°C/W
mW
mA
°C
°C
April 2005
V
A
A
Units
mV
mV
µA
µA
µA
pF
ns
V
V
V

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BAV99WT1G Summary of contents

Page 1

... FR-4 board (3.0 × 4.5 × 0.062” by 1.0 × 0.5” land pads) Electrical Characteristics Symbol Parameter V Breakdown Voltage R V Forward Voltage F I Reverse Leakage R C Total Capacitance T t Reverse Recovery Time rr ©2005 Fairchild Semiconductor Corporation BAV99WT1G Rev 25°C unless otherwise noted a Parameter Parameter T = 25°C unless otherwise noted C Conditions I = 100µ 1.0mA F ...

Page 2

... Forward Voltage Drop, V Figure 3. Total Capacitance 1.80 1.78 1.75 1.73 1.70 1.68 1. Reverse Voltage, V BAV99WT1G Rev. A Figure 2. Reverse Current vs Reverse Voltage 1E-5 1E-6 1E-7 1E-8 0.8 1.0 1.2 [V] F Figure 4. Power Derating Curve 0.25 0.20 0.15 0.10 0.05 ...

Page 3

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete BAV99WT1G Rev. A IntelliMAX™ POP™ ISOPLANAR™ Power247™ LittleFET™ PowerEdge™ MICROCOUPLER™ PowerSaver™ MicroFET™ ...

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