DIODE SWITCH SS DUAL 70V SOT323

BAV99WT1G

Manufacturer Part NumberBAV99WT1G
DescriptionDIODE SWITCH SS DUAL 70V SOT323
ManufacturerFairchild Semiconductor
BAV99WT1G datasheet
 


Specifications of BAV99WT1G

Voltage - Forward (vf) (max) @ If1.25V @ 150mACurrent - Reverse Leakage @ Vr2.5µA @ 70V
Current - Average Rectified (io) (per Diode)200mAVoltage - Dc Reverse (vr) (max)70V
Reverse Recovery Time (trr)6nsDiode TypeStandard
SpeedSmall Signal =< 200mA (Io), Any SpeedDiode Configuration1 Pair Series Connection
Mounting TypeSurface MountPackage / CaseSC-70-3, SOT-323-3
ProductUltra Fast Recovery RectifierConfigurationDual Series
Reverse Voltage70 VForward Voltage Drop1.25 V @ 0.15 A
Recovery Time6 nsForward Continuous Current0.2 A
Max Surge Current2 AReverse Current Ir2.5 uA
Mounting StyleSMD/SMTMaximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 CDc09+
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther namesBAV99WT1GFSTR
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BAV99WT1G
Small Signal Diode
SOT-323
Absolute Maximum Ratings *
Symbol
V
Maximum Repetitive Reverse Voltage
RRM
I
Average Rectified Forward Current
F(AV)
I
Non-repetitive Peak Forward Surge Current
FSM
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
T
Storage Temperature Range
STG
T
Operating Junction Temperature
J
Thermal Characteristics
Symbol
P
Power Dissipation
D
R
Thermal Resistance, Junction to Ambient
θJA
FR-4 board (3.0 × 4.5 × 0.062” by 1.0 × 0.5” land pads)
Electrical Characteristics
Symbol
Parameter
V
Breakdown Voltage
R
V
Forward Voltage
F
I
Reverse Leakage
R
C
Total Capacitance
T
t
Reverse Recovery Time
rr
©2005 Fairchild Semiconductor Corporation
BAV99WT1G Rev. A
3
FA
1
2
T
= 25°C unless otherwise noted
a
Parameter
Parameter
T
= 25°C unless otherwise noted
C
Conditions
I
= 100µA
R
I
= 1.0mA
F
I
= 10mA
F
I
= 50mA
F
I
= 150mA
F
V
= 70V
R
V
= 25V, T
= 150°C
R
A
V
= 70V, T
= 150°C
R
A
V
= 0V, f = 1.0MHz
R
I
= I
= 10mA, I
= 1.0mA,
F
R
RR
R
= 100Ω
L
1
April 2005
Connection Diagram
3
2
1
Value
Unit
70
V
200
mA
1.0
A
2.0
A
°C
-65 to +150
150
°C
Value
Unit
270
mW
°C/W
460
Min.
Max
Units
70
V
715
mV
855
mV
1.0
V
1.25
V
2.5
µA
50
µA
µA
70
2.0
pF
6.0
ns
www.fairchildsemi.com

BAV99WT1G Summary of contents

  • Page 1

    ... FR-4 board (3.0 × 4.5 × 0.062” by 1.0 × 0.5” land pads) Electrical Characteristics Symbol Parameter V Breakdown Voltage R V Forward Voltage F I Reverse Leakage R C Total Capacitance T t Reverse Recovery Time rr ©2005 Fairchild Semiconductor Corporation BAV99WT1G Rev 25°C unless otherwise noted a Parameter Parameter T = 25°C unless otherwise noted C Conditions I = 100µ 1.0mA F ...

  • Page 2

    ... Forward Voltage Drop, V Figure 3. Total Capacitance 1.80 1.78 1.75 1.73 1.70 1.68 1. Reverse Voltage, V BAV99WT1G Rev. A Figure 2. Reverse Current vs Reverse Voltage 1E-5 1E-6 1E-7 1E-8 0.8 1.0 1.2 [V] F Figure 4. Power Derating Curve 0.25 0.20 0.15 0.10 0.05 ...

  • Page 3

    ... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete BAV99WT1G Rev. A IntelliMAX™ POP™ ISOPLANAR™ Power247™ LittleFET™ PowerEdge™ MICROCOUPLER™ PowerSaver™ MicroFET™ ...