Schottky (Diodes & Rectifiers) 2X10A 100V

STPS20100CT

Manufacturer Part NumberSTPS20100CT
DescriptionSchottky (Diodes & Rectifiers) 2X10A 100V
ManufacturerSTMicroelectronics
STPS20100CT datasheet
 


Specifications of STPS20100CT

ProductSchottky RectifiersPeak Reverse Voltage100 V
Forward Continuous Current10 AMax Surge Current200 A
ConfigurationDual Common CathodeForward Voltage Drop0.95 V at 20 A
Maximum Reverse Leakage Current150 uAOperating Temperature Range+ 175 C
Mounting StyleThrough HolePackage / CaseTO-220AB
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
V
(max)
F
Tj (max)
FEATURES
Negligible switching losses
Low forward voltage drop
Low capacitance
High reverse avalanche surge capability
DESCRIPTION
High voltage dual Schottky rectifier suited for
switchmode power supplies and other power
converters. Packaged in TO-220AB, this device
is intended for use in medium voltage operation,
and particularly, in high frequency circuitries
where low switching losses and low noise are
required.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
Repetitive peak reverse voltage
RRM
I
RMS forward current
F(RMS)
I
Average forward current
F(AV)
I
Surge non repetitive forward current
FSM
I
Repetitive peak reverse current
RRM
I
Non repetitive peak reverse current
RSM
Tstg
Storage temperature range
Tj
Maximum junction temperature (*)
dV/dt
Critical rate of rise of reverse voltage
dPtot
1
* :
thermal runaway condition for a diode on its own heatsink
dTj
Rth j
(
a
)
August 2002 - Ed:2C
2 x 10A
100V
0.7V
175°C
Parameter
= 0.5
Tc=110°C
V
= 60V
R
tp=10ms
sinusoidal
tp=2 s
F=1KHz
tp=100 s
STPS20100CT
A1
K
A2
A2
K
A1
TO-220AB
STP20100CT
Value
100
Per diode
30
Per diode
10
Per device
20
Per diode
200
Per diode
1
Per diode
1
- 65 to + 175
175
1000
Unit
V
A
A
A
A
A
A
C
°C
V/ s
1/4

STPS20100CT Summary of contents

  • Page 1

    ... Rth August 2002 - Ed: 10A 100V 0.7V 175°C Parameter = 0.5 Tc=110° 60V R tp=10ms sinusoidal tp=2 s F=1KHz tp=100 s STPS20100CT TO-220AB STP20100CT Value 100 Per diode 30 Per diode 10 Per device 20 Per diode 200 Per diode 1 Per diode ...

  • Page 2

    ... STPS20100CT THERMAL RESISTANCES Symbol Rth (j-c) Junction to case Rth (c) Coupling When the diodes 1 and 2 are used simultaneously : Tj-Tc(diode 1)=P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) ELECTRICAL CHARACTERISTICS (Per diode) STATIC CHARACTERISTICS Symbol Parameter I * Reverse leakage current Forward voltage drop F Pulse test : * ms, duty cycle < 380 s, duty cycle < ...

  • Page 3

    ... Fig Relative variation of thermal transient impedance junction to case versus pulse duration. o Tc= Tc= Tc=110 C 0.1 1 Fig Junction capacitance versus reverse voltage applied. (Typical values) (Per diode) C(pF) 2000 1000 V R(V) 100 100 I FM(A) 10 100 STPS20100CT o Tj=125 C F= 1MH z V R(V) 10 100 3/4 ...

  • Page 4

    ... Ordering type Marking STPS20100CT STPS20100CT Cooling method : by conduction (C) Recommended torque value : 0.55N.m. Maximum torque value : 0.7N.m. Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...