STPS20100CT STMicroelectronics, STPS20100CT Datasheet

Schottky (Diodes & Rectifiers) 2X10A 100V

STPS20100CT

Manufacturer Part Number
STPS20100CT
Description
Schottky (Diodes & Rectifiers) 2X10A 100V
Manufacturer
STMicroelectronics
Datasheet

Specifications of STPS20100CT

Product
Schottky Rectifiers
Peak Reverse Voltage
100 V
Forward Continuous Current
10 A
Max Surge Current
200 A
Configuration
Dual Common Cathode
Forward Voltage Drop
0.95 V at 20 A
Maximum Reverse Leakage Current
150 uA
Operating Temperature Range
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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DESCRIPTION
High voltage dual Schottky rectifier suited for
switchmode power supplies and other power
converters. Packaged in TO-220AB, this device
is intended for use in medium voltage operation,
and particularly, in high frequency circuitries
where low switching losses and low noise are
required.
ABSOLUTE MAXIMUM RATINGS
* :
MAIN PRODUCT CHARACTERISTICS
FEATURES
August 2002 - Ed:2C
Symbol
I
Negligible switching losses
Low forward voltage drop
Low capacitance
High reverse avalanche surge capability
V
F(RMS)
dV/dt
I
I
I
I
Tstg
F(AV)
dPtot
RRM
RSM
FSM
RRM
Tj
dTj
V
Tj (max)
F
V
I
F(AV)
(max)
®
RRM
Repetitive peak reverse voltage
RMS forward current
Average forward current
Surge non repetitive forward current
Repetitive peak reverse current
Non repetitive peak reverse current
Maximum junction temperature (*)
Critical rate of rise of reverse voltage
Storage temperature range
Rth j
(
1
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
a
)
thermal runaway condition for a diode on its own heatsink
2 x 10A
175°C
100V
0.7V
Parameter
= 0.5
Tc=110°C
V
tp=10ms
sinusoidal
tp=2 s
F=1KHz
tp=100 s
R
= 60V
Per device
Per diode
Per diode
Per diode
Per diode
Per diode
A1
A2
STP20100CT
TO-220AB
STPS20100CT
- 65 to + 175
Value
1000
K
100
200
175
A1
30
10
20
1
1
K
A2
V/ s
Unit
°C
V
A
A
A
A
A
A
C
1/4

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STPS20100CT Summary of contents

Page 1

... Rth August 2002 - Ed: 10A 100V 0.7V 175°C Parameter = 0.5 Tc=110° 60V R tp=10ms sinusoidal tp=2 s F=1KHz tp=100 s STPS20100CT TO-220AB STP20100CT Value 100 Per diode 30 Per diode 10 Per device 20 Per diode 200 Per diode 1 Per diode ...

Page 2

... STPS20100CT THERMAL RESISTANCES Symbol Rth (j-c) Junction to case Rth (c) Coupling When the diodes 1 and 2 are used simultaneously : Tj-Tc(diode 1)=P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) ELECTRICAL CHARACTERISTICS (Per diode) STATIC CHARACTERISTICS Symbol Parameter I * Reverse leakage current Forward voltage drop F Pulse test : * ms, duty cycle < 380 s, duty cycle < ...

Page 3

... Fig Relative variation of thermal transient impedance junction to case versus pulse duration. o Tc= Tc= Tc=110 C 0.1 1 Fig Junction capacitance versus reverse voltage applied. (Typical values) (Per diode) C(pF) 2000 1000 V R(V) 100 100 I FM(A) 10 100 STPS20100CT o Tj=125 C F= 1MH z V R(V) 10 100 3/4 ...

Page 4

... Ordering type Marking STPS20100CT STPS20100CT Cooling method : by conduction (C) Recommended torque value : 0.55N.m. Maximum torque value : 0.7N.m. Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...

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