BAS40 Taiwan Semiconductor, BAS40 Datasheet

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BAS40

Manufacturer Part Number
BAS40
Description
Schottky (Diodes & Rectifiers) 40 Volt 0.2 Amp Single
Manufacturer
Taiwan Semiconductor
Datasheet

Specifications of BAS40

Product
Schottky Diodes
Peak Reverse Voltage
40 V
Forward Continuous Current
0.2 A
Max Surge Current
0.6 A
Configuration
Single
Recovery Time
5 ns
Forward Voltage Drop
1 V at 40 mA
Maximum Reverse Leakage Current
0.2 uA at 30 V
Operating Temperature Range
- 55 C to + 125 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
RF

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Features
Mechanical Data
Maximum Ratings T
Type Number
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current (Note 1)
Non-Repetitive Peak Forward Surge Current
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air
(Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Electrical Characteristics
Type Number
Reverse Breakdown Voltage
Reverse Leakage Current tp<300us, VR=30V
Forward Voltage Drop
Junction Capacitance
Reverse Recovery Time (Note 2)
Notes: 1. Valid Provided that Terminals are Kept at Ambient Temperature.
Pb
Low turn-on voltage
Fast switching
PN junction guard Ring for transient and ESD
protection
Case: SOT-23, Molded plastic
Terminals: Solderable per MIIL-STD-202,
Marking & Polarity: See diagram below
Weight: 0.008 grams (approx.
2. Reverse Recovery Test Conditions: I
RoHS
RoHS
COMPLIANCE
COMPLIANCE
Method 208
VR=0, f=1.0MHz
tp<300us, IF=40mA
tp=300us, IF=1.0mA
A
@ t ≦1.0s
=
25℃ unless otherwise specified
I
R
)
=10uA
Surface Mount Schottky Barrier Diode
Symbol
V
Symbol
V
(BR)
Cj
trr
I
V
R
F
V
R
F
I
T
=I
RWM
I
FSM
RRM
V
Pd
θJA
T
FM
STG
R
R
J
=10mA, I
BAS40 / -04 / -05 / -06
Dimensions in inches and (millimeters)
Min
40
--
--
-
-
rr
=1.0mA, R
-55 to + 125
-65 to + 150
SOT-23
BAS40
200
357
200
600
40
Typ
4.0
20
--
-
-
-
L
=100Ω.
Version: B07
Max
200
380
5.0
5.0
1000
-
Units
O
mW
C/W
mA
mA
O
O
V
C
C
Units
mV
nS
nA
pF
V

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BAS40 Summary of contents

Page 1

... Forward Voltage Drop tp=300us, IF=1.0mA tp<300us, IF=40mA Junction Capacitance VR=0, f=1.0MHz Reverse Recovery Time (Note 2) Notes: 1. Valid Provided that Terminals are Kept at Ambient Temperature. 2. Reverse Recovery Test Conditions: I BAS40 / -04 / -05 / -06 Surface Mount Schottky Barrier Diode Dimensions in inches and (millimeters) ) Symbol V RRM V ...

Page 2

... RATINGS AND CHARACTERISTIC CURVES (BAS40 / -04 / -05 / -06) FIG.1- POWER DERATING CURVE 200 100 AMBIENT TEMPERATURE ( C) A FIG.3- TYPICAL FORWARD CHARACTERISTICS 0.001 T = 125 C A 0.0001 0 0.2 0.4 0.6 0 INSTANTANEOUS FORWARD VOLTAGE (mV) j FIG.5- TYPICAL TOTAL CAPACITANCE VS REVERSE VOLTAGE 4.0 2 REVERSE VOLTAGE FIG.2- MAXIMUM NON-REPETITIVE PEAK ...

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