MMDL301T1G
Silicon Hot-Carrier Diodes
Schottky Barrier Diode
VHF detector applications. They are readily adaptable to many other
fast switching RF and digital applications. They are supplied in an
inexpensive plastic package for low−cost, high−volume consumer
and industrial/commercial requirements. They are available in a
Surface Mount package.
Features
•
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 Minimum Pad
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2010
September, 2010− Rev. 2
ELECTRICAL CHARACTERISTICS
Reverse Voltage
Total Device Dissipation FR−5 Board,
(Note 1) @T
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature Range
Reverse Breakdown Voltage
Total Capacitance
Reverse Leakage
Forward Voltage
Forward Voltage
These devices are designed primarily for high−efficiency UHF and
Compliant
Extremely Low Minority Carrier Lifetime − 15 ps (Typ)
Very Low Capacitance − 1.5 pF (Max) @ V
Low Reverse Leakage − I
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
(I
(V
(V
(I
(I
R
F
F
R
R
= 1.0 mAdc) Figure 4
= 10 mAdc) Figure 4
= 10 mA)
= 15 V, f = 1.0 MHz) Figure 1
= 25 V) Figure 3
Characteristic
A
Characteristic
= 25°C
Rating
(T
J
= 125°C unless otherwise noted)
R
= 13 nAdc (Typ)
Symbol
V
(BR)R
C
V
V
I
(T
R
T
F
F
A
Symbol
Symbol
T
= 25°C unless otherwise noted)
R
J
V
P
, T
qJA
R
D
Min
stg
30
−
−
−
−
R
= 15 V
−55 to +150
0.38
0.52
Typ
0.9
13
−
Value
Max
1.57
200
635
30
Max
0.45
200
1.5
0.6
−
1
mW/°C
°C/W
Unit
Unit
nAdc
mW
Unit
Vdc
Vdc
°C
pF
V
V
†For information on tape and reel specifications,
MMDL301T1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Date Code orientation may vary depending
Device
HOT−CARRIER DETECTOR
upon manufacturing location.
AND SWITCHING DIODES
(Note: Microdot may be in either location)
1
ORDERING INFORMATION
30 VOLTS SILICON
4T
M
G
CATHODE
MARKING DIAGRAM
http://onsemi.com
1
SOD−323
(Pb−Free)
Package
= Device Code
= Date Code*
= Pb−Free Package
2
Publication Order Number:
4T M G
G
ANODE
CASE 477
SOD−323
PLASTIC
STYLE 1
3000 / Tape & Reel
2
Shipping
MMDL301T1/D
†