1N5818 ON Semiconductor, 1N5818 Datasheet
1N5818
Specifications of 1N5818
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1N5818 Summary of contents
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... Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low− ...
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... Thermal Resistance, Junction−to−Ambient ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 2) Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2) 1. Lead Temperature reference is cathode lead 1/32 in from case. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. 1N5817, 1N5818, 1N5819 ≤ 0.2 V (dc 90°C, R(equiv 55° ...
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... Step 4. Find T from equation (3). A(max) Step 4. Find T = 109 − (80) (0.5) = 69°C. A(max) **Values given are for the 1N5818. Power is slightly lower for the 1N5817 because of its lower forward voltage, and higher for the 1N5819. Half Wave Circuit Load Resistive Capacitive* Sine Wave 0 ...
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... TYPICAL VALUES FOR R qJA Lead Length, L (in) Mounting Method 1/8 1/4 1 1N5817, 1N5818, 1N5819 5.0 Sine Wave = π (Resistive Load) I 3.0 (FM) I 2.0 (AV) Capacitive 1.0 Loads 0.7 0.5 TYPICAL 0.3 0.2 0.1 0.07 ...
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... INSTANTANEOUS FORWARD VOLTAGE (VOLTS) F Figure 7. Typical Forward Voltage 1N5817, 1N5818, 1N5819 NOTE 5. — THERMAL CIRCUIT MODEL (For heat conduction through the leads qL(A) qJ(A) qJ(K) qL( L(A) C(A) ...
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... Tape and Reel Packaging Specifications Brochure, BRD8011/D. *This package is inherently Pb−Free. 1N5817, 1N5818, 1N5819 200 100 1.0 MHz 10 ...
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... Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com 1N5817, 1N5818, 1N5819 PACKAGE DIMENSIONS AXIAL LEAD CASE 59−10 ISSUE U NOTES: 1 ...