STPS20L25CG STMicroelectronics, STPS20L25CG Datasheet

Schottky (Diodes & Rectifiers) LOW DROP POWER RECTIFIER

STPS20L25CG

Manufacturer Part Number
STPS20L25CG
Description
Schottky (Diodes & Rectifiers) LOW DROP POWER RECTIFIER
Manufacturer
STMicroelectronics
Datasheet

Specifications of STPS20L25CG

Product
Schottky Rectifiers
Peak Reverse Voltage
25 V
Forward Continuous Current
10 A
Max Surge Current
220 A
Configuration
Dual Common Cathode
Forward Voltage Drop
0.56 V at 20 A
Maximum Reverse Leakage Current
800 uA
Operating Temperature Range
+ 150 C
Mounting Style
SMD/SMT
Package / Case
D2PAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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FEATURES AND BENEFITS
n
n
n
DESCRIPTION
Dual center tap Schottky rectifier suited to
Switched Mode Power Supplies and high
frequency DC to DC converters.
Packaged in TO-220AB and D
especially intended for use as a rectifier at the
secondary of 3.3V SMPS units.
ABSOLUTE RATINGS (limiting values, per diode)
* :
MAIN PRODUCT CHARACTERISTICS
July 2003 - Ed : 4A
Symbol
I
VERY LOW FORWARD VOLTAGE DROP FOR
LESS POWER DISSIPATION AND REDUCED
HEATSINK
OPTIMIZED CONDUCTION/REVERSE LOSSES
TRADE-OFF WHICH MEANS THE HIGHEST
EFFICIENCY IN THE APPLICATIONS
AVALANCHE CAPABILITY SPECIFIED
V
F(RMS)
P
dV/dt
I
I
I
I
F(AV)
T
dPtot
RRM
RSM
FSM
RRM
ARM
Tj
dTj
stg
V
Tj (max)
F
V
I
F(AV)
(max)
®
RRM
Repetitive peak reverse voltage
RMS forward current
Average forward current
Surge non repetitive forward current
Repetitive peak reverse current
Non repetitive peak reverse current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
Rth j
(
1
a
)
thermal runaway condition for a diode on its own heatsink
LOW DROP POWER SCHOTTKY RECTIFIER
2
PAK, this device is
2 x 10 A
150 °C
0.35 V
25 V
Parameter
Tc = 145°C
tp = 10 ms Sinusoidal
tp=2 µs square F=1kHz
tp = 100 µs square
tp = 1µs Tj = 25°C
= 0.5
STPS20L25CT
TO-220AB
Per diode
Per device
STPS20L25CT/CG
A1
A2
A1
K
A2
- 65 to + 150
10000
STPS20L25CG
Value
5300
K
220
150
25
30
10
20
1
3
D
K
2
PAK
A1
A2
V/µs
Unit
°C
W
V
A
A
A
A
A
C
1/5

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STPS20L25CG Summary of contents

Page 1

... V 150 °C 0.35 V STPS20L25CT 2 PAK, this device is Parameter Tc = 145° Sinusoidal tp=2 µs square F=1kHz tp = 100 µs square tp = 1µ 25°C STPS20L25CT/ TO-220AB D PAK STPS20L25CG Value 25 30 Per diode 10 Per device 20 220 1 3 5300 - 150 150 10000 A2 Unit °C V/µs ...

Page 2

STPS20L25CT/CG THERMAL RESISTANCES Symbol R Junction to case th (j- (c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1 th(j-c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Tests conditions I * ...

Page 3

Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values). IM(A) 200 180 160 140 120 100 t(s) =0.5 0 1E-3 1E-2 Fig. 7: Reverse leakage current versus reverse voltage ...

Page 4

STPS20L25CT/CG PACKAGE MECHANICAL DATA 2 D PAK FLAT ZONE NO LESS THAN 2mm FOOTPRINT DIMENSIONS (in millimeters) 16.90 10.30 8.90 4/5 REF ...

Page 5

... STPS20L25CT STPS20L25CG STPS20L25CG STPS20L25CG-TR STPS20L25CG EPOXY MEETS UL94,V0 n Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...

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