205RK120F 3/4" UNF

Manufacturer Part Number205RK120F 3/4" UNF
DescriptionSCRs 205 Amp 1200 Volt
ManufacturerRuttonsha
205RK120F 3/4" UNF datasheets

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Specifications of 205RK120F 3/4" UNF

Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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INVERTER GRADE THYRISTORS
Switching
Parameter
di/dt
Max. non-repetitive rate of rise
of turned-on current
t
Typical delay time
d
t
Maximum turn-off time
q
Blocking
Parameter
dv/dt
Maximum critical rate of rise of
off-state voltage
I
Max. peak reverse and off-state
RRM
I
leakage current
DRM
Triggering
Parameter
P
Maximum peak gate power
GM
P
Maximum average gate power
G(AV)
I
Max. peak positive gate current
GM
+V
Maximum peak positive
GM
gate voltage
-V
Maximum peak negative
GM
gate voltage
I
Max. DC gate current required
GT
to trigger
V
Max. DC gate voltage required
GT
to trigger
I
Max.DC gate current not to trigger
GD
V
Max.DC gate voltage not to trigger
GD
205 RK...F Series
205 RK...F
Units
Conditions
1000
A /µs
T
=T
max., V
J
J
T
= 2 x di/dt
TM
°
µs
0.79
T
=25
C,V
J
Resistive load, Gate pulse: 10V,5 Ω source
Min
Max
T
=T
max. I
J
J
µs
20
30
V
= 50V, t
R
205 RK..F
Units
Conditions
500
V/µs
T
= T
J
J
available on request
40
mA
T
= T
J
J
205 RK..F
Units
Conditions
60
W
T
= T
J
J
10
W
T
= T
J
J
10
A
T
= T
J
J
20
T
= T
V
J
J
5
200
mA
T
= 25
J
3
V
20
mA
T
= T
J
J
0.25
V
= rated V
DRM
DRM
=rated V
I
= 50ADC, t
DM
DRM,
TM
=300A,commutating di/dt = 20A/µs,
TM
=500µs,dv/dt : see table in device code
p
max. linear to 80% rated V
higher value
DRM
max. rated V
/V
applied
DRM
RRM
max., f = 50Hz, d% = 50
max., f = 50Hz, d% = 50
≤ 5 ms
max., t
p
≤ 5 ms
max., t
p
°
= 12V, Ra = 6 Ω.
C,V
A
max., rated V
applied
DRM
=1µs
p
3