16TTS12SPBF Vishay, 16TTS12SPBF Datasheet - Page 2

SCRs 1200 Volt 16 Amp

16TTS12SPBF

Manufacturer Part Number
16TTS12SPBF
Description
SCRs 1200 Volt 16 Amp
Manufacturer
Vishay
Datasheets

Specifications of 16TTS12SPBF

Breakover Current Ibo Max
200 A
Rated Repetitive Off-state Voltage Vdrm
1200 V
Off-state Leakage Current @ Vdrm Idrm
0.5 mA
Forward Voltage Drop
1.4 V
Gate Trigger Voltage (vgt)
2 V
Maximum Gate Peak Inverse Voltage
10 V
Gate Trigger Current (igt)
60 mA
Holding Current (ih Max)
100 mA
Mounting Style
SMD/SMT
Package / Case
D2PAK
Peak Repetitive Off-state Voltage, Vdrm
1.2kV
Gate Trigger Current Max, Igt
90mA
Current It Av
10A
On State Rms Current It(rms)
16A
Peak Non Rep Surge Current Itsm 50hz
200A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
VS-16TTS..SPbF High Voltage Series
Vishay Semiconductors
www.vishay.com
2
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
Maximum RMS on-state current
Maximum peak, one-cycle,
non-repetitive surge current
Maximum I
Maximum I
Maximum on-state voltage drop
On-state slope resistance
Threshold voltage
Maximum reverse and direct leakage current
Holding current
Maximum latching current
Maximum rate of rise of off-state voltage
Maximum rate of rise of turned-on current
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
Maximum required DC gate current to trigger
Maximum required DC gate voltage to trigger
Maximum DC gate voltage not to trigger
Maximum DC gate current not to trigger
SWITCHING
PARAMETER
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
2
2
t for fusing
√t for fusing
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
SYMBOL
SYMBOL
SYMBOL
I
RM
P
- V
V
dV/dt
+ I
Phase Control SCR, 16 A
I
dI/dt
I
P
I
V
V
V
T(AV)
I
I
RMS
TSM
G(AV)
I
T(TO)
t
I
2
t
GT
GD
t
I
I
r
GM
GD
gt
2
TM
GT
rr
/I
H
q
√t
L
GM
GM
t
t
DM
Surface Mountable
T
T
T
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
10 A, T
T
T
T
Anode supply = 6 V, resistive load, initial I
Anode supply = 6 V, resistive load
Anode supply = 6 V, resistive load, T
Anode supply = 6 V, resistive load, T
Anode supply = 6 V, resistive load, T
Anode supply = 6 V, resistive load, T
Anode supply = 6 V, resistive load, T
Anode supply = 6 V, resistive load, T
T
J
J
C
J
J
J
J
= 25 °C
= 125 °C
= 125 °C
= 25 °C
= 125 °C
= 125 °C, V
= 98 °C, 180° conduction, half sine wave
J
= 25 °C
DRM
V
TEST CONDITIONS
TEST CONDITIONS
TEST CONDITIONS
R
= Rated V
= Rated value
DiodesEurope@vishay.com
RRM
RRM
RRM
applied
applied
/V
DRM
J
J
J
J
J
J
= - 10 °C
= 25 °C
= 125 °C
= - 10 °C
= 25 °C
= 125 °C
T
= 1 A
Document Number: 94589
TYP. MAX.
VALUES
VALUES
VALUES
-
0.25
110
Revision: 08-Jun-10
8.0
2.0
1.5
3.0
2.0
1.0
2.0
0.9
10
90
60
35
2000
4
24.0
170
200
144
200
200
500
150
1.4
1.1
0.5
10
16
10
100
UNITS
UNITS
UNITS
mA
mA
W
μs
A
A
V/μs
A/μs
V
V
A
mA
2
A
V
V
2
√s
s

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