16TTS12SPBF Vishay, 16TTS12SPBF Datasheet - Page 4

• Manufacturer Part Number: 16TTS12SPBF
• Description: SCRs 1200 Volt 16 Amp
• Manufacturer: Vishay

Specifications of 16TTS12SPBF

• Breakover Current Ibo Max: 200 A
• Rated Repetitive Off-state Voltage Vdrm: 1200 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.4 V
• Gate Trigger Voltage (vgt): 2 V
• Maximum Gate Peak Inverse Voltage: 10 V
• Gate Trigger Current (igt): 60 mA
• Holding Current (ih Max): 100 mA
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Peak Repetitive Off-state Voltage, Vdrm: 1.2kV
• Gate Trigger Current Max, Igt: 90mA
• Current It Av: 10A
• On State Rms Current It(rms): 16A
• Peak Non Rep Surge Current Itsm 50hz: 200A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

VS-16TTS..SPbF High Voltage Series
Vishay Semiconductors
www.vishay.com
4
Fig. 5 - Maximum Non-Repetitive Surge Current
Number Of Equal Amplitude Half C ycle Current Pulses (N)
180
160
140
120
100
80
1
16TTS..Series
At Any Rated Load Condition And With
Rated V
RRM
[e-mail], [e-mail],
0.01
Applied Following Surge.
0.1
10
0.0001
For technical questions within your region, please contact one of the following:
1
10
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Initial T = 125°C
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
J
0.001
Fig. 8 - Thermal Impedance Z
1000
Fig. 7 - On-State Voltage Drop Characteristics
100
10
1
100
Phase Control SCR, 16 A
0
16TTS.. Series
Instantaneous On-st ate Voltage (V)
Single Pulse
Surface Mountable
Square Wave Pulse Duration (s)
1
0.01
2
T
T
J
J
= 125°C
= 25°C
3
thJC
0.1
Characteristics
4
Fig. 6 - Maximum Non-Repetitive Surge Current
Steady State Value
(DC Operation)
[e-mail]
16TTS.. Series
200
180
160
140
120
100
80
0.01
5
16TTS.. Series
Maximum Non Repetitive Surge Current
1
Pulse Train Duration (s)
Versus Pulse Train Duration.
No Voltage Reapplied
Rated V
Initial T = 125°C
0.1
10
RRM
J
Document Number: 94589
Reapplied
Revision: 08-Jun-10
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