TIC246M-S Bourns Inc., TIC246M-S Datasheet
TIC246M-S
Manufacturer Part Number
TIC246M-S
Description
Triacs 600V 16A TRIAC
Manufacturer
Bourns Inc.
Datasheet
1.TIC246N-S.pdf
(3 pages)
Specifications of TIC246M-S
Rated Repetitive Off-state Voltage Vdrm
600 V
Breakover Current Ibo Max
125 A
Off-state Leakage Current @ Vdrm Idrm
2 mA
Gate Trigger Voltage (vgt)
2 V
Gate Trigger Current (igt)
50 mA
Holding Current (ih Max)
40 mA
Forward Voltage Drop
1.7 V @ 22.5 A
Mounting Style
Through Hole
Package / Case
TO-220
Maximum Operating Temperature
+ 110 C
Minimum Operating Temperature
- 40 C
Repetitive Peak Forward Blocking Voltage
600 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
absolute maximum ratings over operating case temperature (unless otherwise noted)
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
electrical characteristics at 25°C case temperature (unless otherwise noted )
† All voltages are with respect to Main Terminal 1.
NOTE
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
Repetitive peak off-state voltage (see Note 1)
Full-cycle RMS on-state current at (or below) 70°C case temperature (see Note 2)
Peak on-state surge current full-sine-wave at (or below) 25°C case temperature (see Note 3)
Peak gate current
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
I
I
V
V
DRM
GT
GT
T
●
●
●
●
●
●
R O D U C T
High Current Triacs
16 A RMS
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
125 A Peak Current
Max I
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge
4: This parameter must be measured using pulse techniques, t
PARAMETER
Repetitive peak
off-state current
Gate trigger
current
Gate trigger
voltage
On-state voltage
the rate of 400 mA/°C.
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
the current carrying contacts are located within 3.2 mm from the device body.
GT
of 50 mA (Quadrants 1 - 3)
I N F O R M A T I O N
V
V
V
V
V
V
V
V
V
I
TM
D
supply
supply
supply
supply
supply
supply
supply
supply
= rated V
= ±22.5 A
= +12 V†
= +12 V†
= -12 V†
= -12 V†
= +12 V†
= +12 V†
= -12 V†
= -12 V†
RATING
DRM
I
R
R
R
R
R
R
R
R
I
TEST CONDITIONS
G
G
L
L
L
L
L
L
L
L
= 0
= 50mA
= 10 Ω
= 10 Ω
= 10 Ω
= 10 Ω
= 10 Ω
= 10 Ω
= 10 Ω
= 10 Ω
p
= ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from
MT1
MT2
G
Pin 2 is in electrical contact with the mounting base.
T
t
t
t
t
t
t
t
t
(see Note 4)
p(g)
p(g)
p(g)
p(g)
p(g)
p(g)
p(g)
p(g)
TIC246M
TIC246D
TIC246S
TIC246N
C
= 110°C
> 20 µs
> 20 µs
> 20 µs
> 20 µs
> 20 µs
> 20 µs
> 20 µs
> 20 µs
TO-220 PACKAGE
(TOP VIEW)
SYMBOL
I
T(RMS)
V
I
T
I
TSM
T
DRM
GM
T
stg
C
L
MIN
2
3
1
SILICON TRIACS
TYP
±1.4
-0.8
-0.8
-40 to +110
-40 to +125
-19
-16
0.8
0.9
12
34
TIC246 SERIES
VALUE
400
600
700
800
125
230
±1
16
MAX
±1.7
-50
-50
±2
50
-2
-2
2
2
MDC2ACA
UNIT
UNIT
mA
mA
°C
°C
°C
V
A
A
A
V
V
1
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TIC246M-S Summary of contents
Page 1
... DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. MT1 MT2 G Pin electrical contact with the mounting base. RATING TIC246D TIC246M TIC246S TIC246N TEST CONDITIONS DRM Ω ...
Page 2
... Rated V D di/dt on -state current di / mA/µs G † All voltages are with respect to Main Terminal 1. NOTE 5: The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics: = 100 Ω µ ≤ kHz p(g) r thermal characteristics ...
Page 3
... T - Case Temperature - °C C Figure DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TYPICAL CHARACTERISTICS TC08AD 1000 100 10 = 100 100 120 -60 TIC246 SERIES SILICON TRIACS LATCHING CURRENT vs CASE TEMPERATURE V I supply GTM + + + - V = ± -40 - 100 120 T - Case Temperature - °C C Figure 4 ...