16TTS12PBF Vishay, 16TTS12PBF Datasheet - Page 5

• Manufacturer Part Number: 16TTS12PBF
• Description: SCRs 1200 Volt 16 Amp
• Manufacturer: Vishay

Specifications of 16TTS12PBF

• Breakover Current Ibo Max: 200 A
• Rated Repetitive Off-state Voltage Vdrm: 1200 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.4 V
• Gate Trigger Voltage (vgt): 2 V
• Maximum Gate Peak Inverse Voltage: 10 V
• Gate Trigger Current (igt): 60 mA
• Holding Current (ih Max): 100 mA
• Mounting Style: Through Hole
• Package / Case: TO-220AC
• Peak Repetitive Off-state Voltage, Vdrm: 1.2kV
• Gate Trigger Current Max, Igt: 90mA
• Current It Av: 10A
• On State Rms Current It(rms): 16A
• Peak Non Rep Surge Current Itsm 50hz: 200A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 94603
Revision: 15-Sep-08
0.01
100
0.1
0.1
10
0.0001
10
0.001
1
1
a)Recommended load line for
b)Recommended load line for
R ec tangular gate pulse
VGD
rated di/dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
<= 30% rated di/ dt: 10 V, 65 ohms
tr = 1 µs, tp >= 6 µs
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
IGD
For technical questions, contact: [e-mail]
0.001
Phase Control SCR, 10 A
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1000
Fig. 8 - Thermal Impedance Z
100
Fig. 7 - On-State Voltage Drop Characteristics
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1
0
16T T S .. S eries
Instantaneous On-s tate Voltage (V)
S ingle Pulse
Instantaneous Gate Current (A)
S quare Wave Pulse Duration (s)
Fig. 9 - Gate Characteristics
(b )
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16T T S .. S eries
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0.1
2
T = 125°C
T = 25°C
(a )
J
J
16TTS..PbF High Voltage Series
3
thJC
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1
Characteristics
Frequenc y Limited by PG(AV)
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(1) PGM = 40 , tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
S teady S tate Value
(DC Operation)
16T T S .. S eries
Vishay High Power Products
(4)
5
10
(3)
1
(2)
(1)
100
10
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