TISP4145J1BJR-S Bourns Inc., TISP4145J1BJR-S Datasheet

TISP4145J1BJR-S

Manufacturer Part Number

TISP4145J1BJR-S

Description

Sidacs 120V(DRM) 1KA(IPP)145V(BO)

Manufacturer

Bourns Inc.

Datasheet

1.TISP4080J1BJR-S.pdf (12 pages)

Specifications of TISP4145J1BJR-S

Breakover Current Ibo Max

100 A

Rated Repetitive Off-state Voltage Vdrm

120 V

Off-state Leakage Current @ Vdrm Idrm

0.005 mA

Mounting Style

SMD/SMT

Package / Case

DO-214AA

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

TISP4145J1BJR-S

Manufacturer:

BOURNS

Quantity:

240 000

Current page: 1 of 12
Download datasheet (334Kb)

*RoHS Directive 2002/95/EC Jan 27 2003 including Annex

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

Ground Return Element of Y Configuration

-2x Current Capability of Y Upper Elements

-Available in a Wide Range of Voltages

-Enables Symmetrical and Asymmetrical Y Designs

-SMB (DO-214AA) Package

Ion-Implanted Breakdown Region

-Precise and Stable Voltage

-Low Voltage Overshoot Under Surge

The TISP4xxxJ1BJ is a symmetrical voltage-triggered bidirectional thyristor device which has been designed as the tail (ground return) element

of a Y circuit configured protector. As such, the TISP4xxxJ1BJ must be rated to conduct the sum of the TIP and RING currents. For example,

the normal GR-1089-CORE testing can impose 200 A, 10/1000 and 1000 A, 2/10 on the ground return element of the Y configuration. Using

the TISP4xxxJ1BJ together with two TISP4xxxH3BJ parts gives a 2x 100 A, 10/1000 Y protector circuit. For ITU-T applications, using the

TISP4xxxJ1BJ with a TISP3xxxT3BJ gives a coordinated Y protector with a 2x 120 A, 5/310 capability. Design tables are given in the

Applications Information section. These SMB package combinations are often more space efficient than single package Y protection

multi-chip integrations.

These devices allow signal voltages, without clipping, up to the maximum off-state voltage value, V

limited and will not exceed the breakover voltage, V

voltage on-state condition, which diverts the current from the overvoltage through the device. When the diverted current falls below the

holding current, I

SEPTEMBER 2001 - REVISED JANUARY 2007

Description

How to Order

TISP 4xxxJ1BJ

Device

............................................ UL Recognized Components

TISP4070J1

TISP4080J1

TISP4095J1

TISP4115J1

TISP4125J1

TISP4145J1

TISP4165J1

TISP4180J1

TISP4200J1

TISP4219J1

TISP4250J1

TISP4290J1

TISP4350J1

TISP4395J1

Device

, level the devices switches off and restores normal system operation.

B J (SMB/D O - 214AA J-Bend)

Package

100

120

135

145

155

180

190

220

275

320

DRM

115

125

145

165

180

200

219

250

290

350

395

(BO)

TISP4xxxJ1BJ Overvoltage Protector Series

(BO)

R (Embossed T ape Re eled)

, level. If sufficient current flows due to the overvoltage, the device switches into a low-

Carrier

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

Rated for International Surge Wave Shapes

SMB Package (Top View)

Device Symbol

Wave Shape

10/1000

10/160

10/700

10/560

2/10

8/20

TISP4xxxJ1BJR-S

Order As

MT1

TISP4070J1BJ THRU TISP4395J1BJ

TIA/EIA-IS-968 (FCC Part 68)

DRM

, see Figure 1. Voltages above V

ITU-T K.20/21/45

GR-1089-CORE

IEC 61000-4-5

Standard

MT2

MT1

SD4JAA

2 MT2

MD4JAA

1000

PPSM

350

800

400

250

200

DRM

are

Related parts for TISP4145J1BJR-S

TISP4145J1BJR-S Summary of contents

Page 1

Ground Return Element of Y Configuration -2x Current Capability of Y Upper Elements -Available in a Wide Range of Voltages -Enables Symmetrical and Asymmetrical Y Designs -SMB (DO-214AA) Package Ion-Implanted Breakdown Region -Precise and Stable Voltage -Low Voltage Overshoot Under ...

Page 2

TISP4xxxJ1BJ Overvoltage Protector Series Absolute Maximum Ratings Repetitive peak off-state voltage Non-repetitive peak on-state pulse current (see Notes 1 and 2) 2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape) 8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 volt ...

Page 3

TISP4xxxJ1BJ Overvoltage Protector Series Electrical Characteristics Parameter Repetitive peak off ±V DRM D state current V AC breakover voltage dv/dt = ±250 V/ms, R (BO) dv/dt ≤±1000 V/µs, Linear voltage ramp, Ramp breakover ...

Page 4

TISP4xxxJ1BJ Overvoltage Protector Series Electrical Characteristics Parameter I Breakover current dv/dt = ±250 V/ms, R (BO) I Holding current I = ±5 A, di/dt = +/-30 mA/ Critical rate of rise of dv/dt Linear ...

Page 5

TISP4xxxJ1BJ Overvoltage Protector Series Parameter Measurement Information V DRM -v I DRM I (BO) V (BO) Quadrant III Switching Characteristic Figure 1. Voltage-Current Characteristic for Terminals 1-2 SEPTEMBER 2001 - REVISED JANUARY 2007 Specifications are subject to change without notice. ...

Page 6

TISP4xxxJ1BJ Overvoltage Protector Series Typical Characteristics OFF-STATE CURRENT vs JUNCTION TEMPERATURE 100 V = ± 0·1 0·01 0·001 - Junction Temperature - °C J Figure 2. ON-STATE CURRENT vs ON-STATE VOLTAGE ...

Page 7

TISP4xxxJ1BJ Overvoltage Protector Series Typical Characteristics NORMALIZED CAPACITANCE vs OFF-STATE VOLTAGE 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0 Off-state Voltage - V D Figure 6. SEPTEMBER 2001 - REVISED JANUARY ...

Page 8

TISP4xxxJ1BJ Overvoltage Protector Series Rating and Thermal Information NON-REPETITIVE PEAK ON-STATE CURRENT vs CURRENT DURATION 600 Vrm s, 50/60 Hz GEN 1.4*V GEN EIA/JESD51-2 ENVIRONMENT 20 EIA/JESD51-3 PCB ° ...

Page 9

TISP4xxxJ1BJ Overvoltage Protector Series Y Configuration Design This protection configuration has three modes of protection. The RING to TIP terminal pair protection is given by the series combination of protectors Th1a and Th1b, see Figure 11. The terminal pair protection ...

Page 10

TISP4xxxJ1BJ Overvoltage Protector Series GR-1089-CORE Designs (Continued) RING to TIP Voltages V V DRM (BO ±380 ±500 ±440 ±580 ±550 ±700 ±640 ±790 F1b RING TIP F1a Th1a TISP4xxxH3BJ Figure 14. GR-1089-CORE Design ITU-T K.20, K.45 and K.21 ...

Page 11

TISP4xxxJ1BJ Overvoltage Protector Series ITU-T K.20, K.45 and K.21 Designs (Continued) RING to TIP Voltages V V DRM (BO ±550 ±700 ±640 ±790 Asymmetrical Designs These designs are for special needs, where the RING to TIP protection voltage ...

Page 12

TISP4xxxJ1BJ Overvoltage Protector Series Recommended Printed Wiring Land Pattern Dimensions SMB Land Pattern MILLIMETERS DIMENSIONS ARE: (INCHES) Device Symbolization Code Devices will be coded as below. As the device parameters are symmetrical, terminal 1 is not identified. Carrier Information For ...

Related keywords

TISP4145J1BJR-S datasheet
TISP4145J1BJR-S data sheet
TISP4145J1BJR-S pdf datasheet
TISP4145J1BJR-S component
TISP4145J1BJR-S part
TISP4145J1BJR-S distributor
TISP4145J1BJR-S RoHS
TISP4145J1BJR-S datasheet download