HBAT-5402-BLKG Avago Technologies US Inc., HBAT-5402-BLKG Datasheet - Page 7

DIODE SCHOTTKY 30V 220MA SOT-23

HBAT-5402-BLKG

Manufacturer Part Number
HBAT-5402-BLKG
Description
DIODE SCHOTTKY 30V 220MA SOT-23
Manufacturer
Avago Technologies US Inc.
Datasheets

Specifications of HBAT-5402-BLKG

Mounting Type
Surface Mount
Voltage - Reverse Standoff (typ)
30V
Voltage - Breakdown
800V
Power (watts)
250mW
Polarization
Bidirectional
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Dc Reverse (vr) (max)
30V
Current - Average Rectified (io) (per Diode)
220mA (DC)
Diode Configuration
1 Pair Series Connection
Capacitance Ct
3pF
Diode Case Style
SOT-23
Pin Configuration
Series Pair
Breakdown Voltage Min
30V
Forward Voltage
800mV
Breakdown Voltage
30V
Capacitance, Junction
3 pF
Configuration
Series
Current, Forward
100 mA
Current, Surge
1 A
Package Type
SOT-23
Power Dissipation
250 mW
Primary Type
Schottky Barrier
Resistance, Thermal, Junction To Case
500 °C/W
Speed, Switching
Fast
Temperature, Junction, Maximum
+150 °C
Voltage, Forward
800 mV
Capacitance
3pF
Current Rating
220A
Diode Type
RF Schottky
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Current - Reverse Leakage @ Vr
-
Voltage - Forward (vf) (max) @ If
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
516-1872
HBAT-5402-BLKG

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HBAT-5402-BLKG
Manufacturer:
AVAGO/安华高
Quantity:
20 000
Figure 7. Forward Current vs. Forward Voltage at 25°C.
Because the automatic, pick-and-place equipment used
to assemble these products selects dice from adjacent
sites on the wafer, the two diodes which go into the HBAT-
5402 or HBAT-540C (series pair) are closely matched —
without the added expense of testing and binning.
Current Handling in Clipping/Clamping Circuits
The purpose of a clipping/clamping diode is to handle
high currents, protecting delicate circuits downstream
of the diode. Current handling capacity is determined
by two sets of characteristics, those of the chip or device
itself and those of the package into which it is mounted.
noisy data-spikes
long cross-site cable
Figure 8. Two Schottky Diodes Are Used for Clipping/Clamping in a Circuit.
Consider the circuit shown in Figure 8, in which two
Schottky diodes are used to protect a circuit from noise
spikes on a stream of digital data. The ability of the diodes
to limit the voltage spikes is related to their ability to sink
the associated current spikes. The importance of current
handling capacity is shown in Figure 9, where the forward
voltage generated by a forward current is compared in
two diodes. The fi rst is a conventional Schottky diode of
the type generally used in RF circuits, with an R
The second is a Schottky diode of identical characteris-
tics, save the R
relatively high value of R
diode’s terminals to rise as current increases. The power
dissipated in the diode heats the junction, causing R
climb, giving rise to a runaway thermal condition. In the
second diode with low R
place and the voltage across the diode terminals is main-
tained at a low limit even at high values of current.
7
300
100
.01
10
.1
1
pull-down
(or pull-up)
0
V
0.1
F
– FORWARD VOLTAGE (V)
S
0.2
current
limiting
of 1.0 Ω. For the conventional diode, the
HSMS-270x
0.3
0V
voltage limited to
Vs + Vd
0V – Vd
S
0.4
S
Vs
causes the voltage across the
, such heating does not take
HBAT-540x
0.5
0.6
S
of 7.7Ω.
S
to
Maximum reliability is obtained in a Schottky diode
when the steady state junction temperature is main-
tained at or below 150°C, although brief excursions to
higher junction temperatures can be tolerated with no
signifi cant impact upon mean-time-to-failure, MTTF. In
order to compute the junction temperature, Equations
(1) and (3) below must be simultaneously solved.
I
I
T
where:
I
I
V
R
T
I
n = diode ideality factor
θ
T
Equation (1) describes the forward V-I curve of a Schottky
diode. Equation (2) provides the value for the diode’s sat-
uration current, which value is plugged into (1). Equation
(3) gives the value of junction temperature as a function
of power dissipated in the diode and ambient (lead)
temperature.
Figure 9. Comparison of Two Diodes.
F
S
F
S
O
J
J
F
S
A
JC
= I
= I
= forward current
= saturation current
= junction temperature
= saturation current at 25°C
= V
= forward voltage
= series resistance
= ambient (diode lead) temperature
= thermal resistance from junction to case
= θ
S
0
1
6
5
4
3
2
0
F
0
I
298
e
package
F
T
11600 (V
θ
(diode lead)
I
J
F
JC
– FORWARD CURRENT (mA)
0.1
+ T
2
n
+ θ
e
A
nT J
–4060
F
chip
0.2
– I
R
R
s
s
= 7.7
F
= 1.0
R
0.3
S
T J
1
)
–1
298
0.4
1
(1)
(2)
(3)
0.5

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