STPS30L30CG-TR STMicroelectronics, STPS30L30CG-TR Datasheet - Page 2

• Manufacturer Part Number: STPS30L30CG-TR
• Description: DIODE SCHOTTKY 30V 15A D2PAK
• Manufacturer: STMicroelectronics

Specifications of STPS30L30CG-TR

• Voltage - Forward (vf) (max) @ If: 460mV @ 15A
• Current - Reverse Leakage @ Vr: 1.5mA @ 60V
• Current - Average Rectified (io) (per Diode): 15A
• Voltage - Dc Reverse (vr) (max): 30V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Other names: 497-6581-2; STPS30L30CG-TR

Characteristics
1
Table 2.
1. For temperature or pulse time duration deratings, refer to
2. Refer to
3.
Table 3.
1. When the diodes 1 and 2 are used simultaneously: Δ T
Table 4.
1. Pulse test: t
2/9
Symbol
V
V
P
Symbol
Symbol
I
V
F(RMS)
I
ARM
ASM
dV/dt
R
ARM
I
I
I
R
F(AV)
T
energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.
V
RRM
RSM
FSM
I
RRM
th(j-c)
T
dPtot
---------------
R
stg
th(c)
F
dTj
(1)
j
(1)
(1)
(2)
(2)
<
------------------------- -
Rth j a
Figure 12
Repetitive peak reverse voltage
Forward rms current
Average forward current δ = 0.5
Surge non repetitive forward current t
Peak repetitive reverse current
Non repetitive peak reverse current
Repetitive peak avalanche power
Maximum repetitive peak avalanche
voltage
Maximum single pulse peak
avalanche voltage
Storage temperature range
Maximum operating junction temperature
Critical rate of rise of reverse voltage
Junction to case
Coupling
Reverse leakage current
Forward voltage drop
(
1
p
Characteristics
Absolute ratings (limiting values per diode)
Thermal resistance
Static electrical characteristics (per diode)
To evaluate the conduction losses use the following equation:
P = 0.24 x I
–
= 380 µs, δ < 2%
)
condition to avoid thermal runaway for a diode on its own heatsink
Parameter
F(AV)
+ 0.009 x I
(1)
F
Parameter
T
T
T
T
T
T
2
Parameter
(RMS)
j
j
j
j
j
j
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
Doc ID 5506 Rev 6
T
t
t
t
t
I
t
I
p
p
p
p
p
AR
p
AR
c
= 10 ms sinusoidal,
= 2 µs square, F= 1 kHz square
= 100 µs square
= 1 µs T
< 1 µs T
< 1 µs T
j
= 140 °C,
(diode 1) = P(diode1) x R
(3)
< 35 A
< 35 A
Figure 4.
Test conditions
j
j
j
= 25 °C
< 150 °C
< 150 °C
and
V
I
I
F
F
R
Figure
= 15 A
= 30A
= V
Per diode
Total
RRM
Per diode
Per device
5.. More details regarding the avalanche
th(j-c)
(Per diode) + P(diode 2) x R
Min.
Typ.
0.33
0.43
170
Value
-65 to + 175
1.5
0.8
0.1
10000
Value
5300
220
150
STPS30L30C
30
30
15
30
45
45
Max.
0.46
0.37
0.57
1
3
350
1.5
0.5
th(c)
°C/W
Unit
Unit
mA
mA
Unit
V/µs
V
°C
°C
W
V
A
A
A
A
A
V
V