STPS30L30CG-TR STMicroelectronics, STPS30L30CG-TR Datasheet - Page 3

• Manufacturer Part Number: STPS30L30CG-TR
• Description: DIODE SCHOTTKY 30V 15A D2PAK
• Manufacturer: STMicroelectronics

Specifications of STPS30L30CG-TR

• Voltage - Forward (vf) (max) @ If: 460mV @ 15A
• Current - Reverse Leakage @ Vr: 1.5mA @ 60V
• Current - Average Rectified (io) (per Diode): 15A
• Voltage - Dc Reverse (vr) (max): 30V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Other names: 497-6581-2; STPS30L30CG-TR

STPS30L30C
Figure 2.
Figure 4.
Figure 6.
0.001
10
0.01
250
225
200
175
150
125
100
0.1
9
8
7
6
5
4
3
2
1
0
75
50
25
0.01
1E-3
1
0
0
PF(av)(W)
P
IM(A)
P
ARM
ARM p
I
M
2
(1µs)
(t )
δ
=0.5
t
δ = 0.05
0.1
Average forward power dissipation
versus average forward current
(per diode)
Normalized avalanche power
derating versus pulse duration
Non repetitive surge peak forward
current versus overload duration,
(maximum values per diode)
4
6
δ = 0.1
1E-2
8
1
δ = 0.2
IF(av) (A)
t (µs)
p
t(s)
10
12
10
1E-1
δ = 0.5
14
δ
100
16
=tp/T
Tc=25°C
Tc=75°C
Tc=110°C
T
18
δ = 1
Doc ID 5506 Rev 6
tp
1E+0
1000
20
Figure 3.
Figure 5.
Figure 7.
1.0
0.8
0.6
0.4
0.2
0.0
16
14
12
10
8
6
4
2
0
1E-4
0
IF(av)(A)
Zth(j-c)/Rth(j-c)
1.2
0.8
0.6
0.4
0.2
δ = 0.2
δ = 0.1
δ = 0.5
1
0
δ
25
=tp/T
Single pulse
P
ARM
P
ARM
25
T
Average forward current per diode
versus ambient temperature
(δ = 0.5)
Normalized avalanche power
derating versus junction
temperature
Relative variation of thermal
impedance junction to case
versus pulse duration
(25°C)
1E-3
(T )
Rth(j-a)=15°C/W
tp
50
j
Rth(j-a)=50°C/W
50
T (°C)
j
Tamb(°C)
75
1E-2
tp(s)
75
100
100
Rth(j-a)=Rth(j-c)
1E-1
Characteristics
125
δ
=tp/T
125
T
150
tp
1E+0
150
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