TICP106D-R-S Bourns Inc., TICP106D-R-S Datasheet

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TICP106D-R-S

Manufacturer Part Number
TICP106D-R-S
Description
Sidacs 400V 2A SCR
Manufacturer
Bourns Inc.
Datasheet

Specifications of TICP106D-R-S

Breakover Current Ibo Max
15 A
Rated Repetitive Off-state Voltage Vdrm
400 V
Off-state Leakage Current @ Vdrm Idrm
0.02 mA
Forward Voltage Drop
1.5 V @ 1 A
Maximum Operating Temperature
+ 110 C
Mounting Style
Through Hole
Package / Case
TO-92
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
absolute maximum ratings over operating case temperature (unless otherwise noted)
NOTES: 1. These values apply when the gate-cathode resistance R
MARCH 1988 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
Repetitive peak off-state voltage (see Note 1)
Repetitive peak reverse voltage
Continuous on-state current at (or below) 25°C case temperature (see Note 2)
Surge on-state current (see Note 3)
Peak positive gate current (pulse width ≤ 300 µs)
Average gate power dissipation (see Note 4)
Operating case temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
R O D U C T
LP with fomed leads
2 A Continuous On-State Current
15 A Surge-Current
Glass Passivated Wafer
400 V to 600 V Off-State Voltage
Max I
Package Options
2. These values apply for continuous dc operation with resistive load. Above 25°C derate linearly to zero at 110°C.
3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge
4. This value applies for a maximum averaging time of 20 ms.
PACKAGE
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
GT
LP
of 200 µA
I N F O R M A T I O N
Tape and Reel
PACKING
Bulk
RATING
PART # SUFFIX
(None)
R
GK
= 1 kΩ.
TICP106M
TICP106M
TICP106D
TICP106D
SILICON CONTROLLED RECTIFIERS
G
A
K
G
A
K
WITH FORMED LEADS
LP PACKAGE
LP PACKAGE
(TOP VIEW)
(TOP VIEW)
SYMBOL
I
P
T(RMS)
V
V
I
T
I
G(AV)
TSM
T
DRM
RRM
GM
T
stg
C
L
TICP106 SERIES
-40 to +110
-40 to +125
1
2
3
1
2
3
VALUE
400
600
400
600
230
0.2
0.3
15
2
MDC1AA
MDC1AB
UNIT
°C
°C
°C
W
V
V
A
A
A
1

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TICP106D-R-S Summary of contents

Page 1

... Surge may be repeated after the device has returned to original thermal equilibrium. 4. This value applies for a maximum averaging time MARCH 1988 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. SILICON CONTROLLED RECTIFIERS PART # SUFFIX (None) R RATING TICP106D TICP106M TICP106D TICP106M = 1 kΩ. GK TICP106 SERIES LP PACKAGE (TOP VIEW ...

Page 2

TICP106 SERIES SILICON CONTROLLED RECTIFIERS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER Repetitive peak rated V DRM D off-state current Repetitive peak rated V RRM R reverse current I Gate trigger ...

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