STPS40120CT | |
|---|---|
| Manufacturer Part Number | STPS40120CT |
| Description | DIODE SCHOTTKY 120V TO-220AB |
| Manufacturer | STMicroelectronics |
| STPS40120CT datasheets |
|
Availability: By request
International delivery:
Warranty: 60 days
×
- We provide standard 60-days warranty for all parts. If warranty differs we always mention it beforehand. In case of return we cover shipping costs.
- If you still have any questions - please contact us
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Specifications of STPS40120CT | |||
|---|---|---|---|
| Voltage - Forward (vf) (max) @ If | 900mV @ 20A | Current - Reverse Leakage @ Vr | 25µA @ 120V |
| Current - Average Rectified (io) (per Diode) | 20A | Voltage - Dc Reverse (vr) (max) | 120V |
| Diode Type | Schottky | Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Configuration | 1 Pair Common Cathode | Mounting Type | Through Hole |
| Package / Case | TO-220-3 (Straight Leads) | Repetitive Reverse Voltage Vrrm Max | 120V |
| Forward Current If(av) | 40A | Forward Voltage Vf Max | 1V |
| Rohs Compliant | Yes | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Reverse Recovery Time (trr) | - | Other names | 497-4629-5 |
PrevNext
STPS40120C
Figure 1.
Average forward power
dissipation versus average
forward current (per diode)
P
(W)
F(AV)
20
18
16
δ = 0.2
δ = 0.1
14
12
δ = 0.05
10
8
6
4
2
I
(A)
F(AV)
0
0
2
4
6
8
10
12
Figure 3.
Normalized avalanche power
derating versus pulse duration
P
(t )
ARM p
P
(1µs)
ARM
1
0.1
0.01
t (µs)
p
0.001
0.01
0.1
1
Figure 5.
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
I (A)
M
240
220
200
180
160
140
120
100
80
60
I
M
40
t
20
t(s)
δ
=0.5
0
1.E-03
1.E-02
Figure 2.
I
F(AV)
22
δ = 0.5
20
18
16
δ = 1
14
12
10
8
6
T
4
2
δ
tp
=tp/T
0
0
14
16
18
20
22
24
Figure 4.
P
ARM p
P
ARM
1.2
1
0.8
0.6
0.4
0.2
0
25
10
100
1000
Figure 6.
Z
th(j-c)
1.0
0.9
0.8
0.7
δ = 0.5
0.6
T =25°C
c
0.5
T =75°C
c
0.4
δ = 0.2
0.3
δ = 0.1
T =125°C
c
0.2
Single pulse
0.1
0.0
1.E-01
1.E+00
1.E-03
Characteristics
Average forward current versus
ambient temperature
δ
(
= 0.5, per diode)
(A)
R
=R
th(j-a)
th(j-c)
R
=15°C/W
th(j-a)
T
T
(°C)
amb
δ
=tp/T
tp
25
50
75
100
125
Normalized avalanche power
derating versus junction
temperature
(t )
(25°C)
T (°C)
j
50
75
100
Relative variation of thermal
impedance junction to ambient
versus pulse duration
/R
th(j-c)
t (s)
p
1.E-02
1.E-01
150
175
125
150
T
δ
tp
=tp/T
1.E+00
3/8
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