DIODE SCHOTTKY 120V TO-220AB

 

STPS40120CT

Manufacturer Part NumberSTPS40120CT
DescriptionDIODE SCHOTTKY 120V TO-220AB
ManufacturerSTMicroelectronics
STPS40120CT datasheets

Availability: By request

International delivery:

Warranty: 60 days

Shipping & payment terms

Added to cart

 

Specifications of STPS40120CT

Voltage - Forward (vf) (max) @ If900mV @ 20ACurrent - Reverse Leakage @ Vr25µA @ 120V
Current - Average Rectified (io) (per Diode)20AVoltage - Dc Reverse (vr) (max)120V
Diode TypeSchottkySpeedFast Recovery =< 500ns, > 200mA (Io)
Diode Configuration1 Pair Common CathodeMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)Repetitive Reverse Voltage Vrrm Max120V
Forward Current If(av)40AForward Voltage Vf Max1V
Rohs CompliantYesLead Free Status / RoHS StatusLead free / RoHS Compliant
Reverse Recovery Time (trr)-Other names497-4629-5
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
Page 3/8

Download datasheet (107Kb)Embed
PrevNext
STPS40120C
Figure 1.
Average forward power
dissipation versus average
forward current (per diode)
P
(W)
F(AV)
20
18
16
δ = 0.2
δ = 0.1
14
12
δ = 0.05
10
8
6
4
2
I
(A)
F(AV)
0
0
2
4
6
8
10
12
Figure 3.
Normalized avalanche power
derating versus pulse duration
P
(t )
ARM p
P
(1µs)
ARM
1
0.1
0.01
t (µs)
p
0.001
0.01
0.1
1
Figure 5.
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
I (A)
M
240
220
200
180
160
140
120
100
80
60
I
M
40
t
20
t(s)
δ
=0.5
0
1.E-03
1.E-02
Figure 2.
I
F(AV)
22
δ = 0.5
20
18
16
δ = 1
14
12
10
8
6
T
4
2
δ
tp
=tp/T
0
0
14
16
18
20
22
24
Figure 4.
P
ARM p
P
ARM
1.2
1
0.8
0.6
0.4
0.2
0
25
10
100
1000
Figure 6.
Z
th(j-c)
1.0
0.9
0.8
0.7
δ = 0.5
0.6
T =25°C
c
0.5
T =75°C
c
0.4
δ = 0.2
0.3
δ = 0.1
T =125°C
c
0.2
Single pulse
0.1
0.0
1.E-01
1.E+00
1.E-03
Characteristics
Average forward current versus
ambient temperature
δ
(
= 0.5, per diode)
(A)
R
=R
th(j-a)
th(j-c)
R
=15°C/W
th(j-a)
T
T
(°C)
amb
δ
=tp/T
tp
25
50
75
100
125
Normalized avalanche power
derating versus junction
temperature
(t )
(25°C)
T (°C)
j
50
75
100
Relative variation of thermal
impedance junction to ambient
versus pulse duration
/R
th(j-c)
t (s)
p
1.E-02
1.E-01
150
175
125
150
T
δ
tp
=tp/T
1.E+00
3/8