STPS20L25CT

Manufacturer Part NumberSTPS20L25CT
DescriptionDIODE SCHOTTKY 25V 10A TO-220AB
ManufacturerSTMicroelectronics
STPS20L25CT datasheet
 


Specifications of STPS20L25CT

Voltage - Forward (vf) (max) @ If460mV @ 10ACurrent - Reverse Leakage @ Vr800µA @ 25V
Current - Average Rectified (io) (per Diode)10AVoltage - Dc Reverse (vr) (max)25V
Diode TypeSchottkySpeedFast Recovery =< 500ns, > 200mA (Io)
Diode Configuration1 Pair Common CathodeMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)Lead Free Status / RoHS StatusLead free / RoHS Compliant
Reverse Recovery Time (trr)-Other names497-7552-5
STPS20L25CT
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LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
Tj (max)
V
(max)
F
FEATURES AND BENEFITS
VERY LOW FORWARD VOLTAGE DROP FOR
n
LESS POWER DISSIPATION AND REDUCED
HEATSINK
OPTIMIZED CONDUCTION/REVERSE LOSSES
n
TRADE-OFF WHICH MEANS THE HIGHEST
EFFICIENCY IN THE APPLICATIONS
AVALANCHE CAPABILITY SPECIFIED
n
DESCRIPTION
Dual center tap Schottky rectifier suited to
Switched Mode Power Supplies and high
frequency DC to DC converters.
Packaged in TO-220AB and D
especially intended for use as a rectifier at the
secondary of 3.3V SMPS units.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
V
Repetitive peak reverse voltage
RRM
I
RMS forward current
F(RMS)
I
Average forward current
F(AV)
I
Surge non repetitive forward current
FSM
I
Repetitive peak reverse current
RRM
I
Non repetitive peak reverse current
RSM
P
Repetitive peak avalanche power
ARM
T
Storage temperature range
stg
Tj
Maximum operating junction temperature *
dV/dt
Critical rate of rise of reverse voltage
dPtot
1
* :
thermal runaway condition for a diode on its own heatsink
dTj
Rth j
a
(
)
July 2003 - Ed : 4A
2 x 10 A
25 V
150 °C
0.35 V
STPS20L25CT
2
PAK, this device is
Parameter
Tc = 145°C
= 0.5
tp = 10 ms Sinusoidal
tp=2 µs square F=1kHz
tp = 100 µs square
tp = 1µs Tj = 25°C
STPS20L25CT/CG
A1
K
A2
K
A2
A1
K
A1
2
TO-220AB
D
PAK
STPS20L25CG
Value
25
30
Per diode
10
Per device
20
220
1
3
5300
- 65 to + 150
150
10000
A2
Unit
V
A
A
A
A
A
W
C
°C
V/µs
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STPS20L25CT Summary of contents

  • Page 1

    ... Rth July 2003 - 150 °C 0.35 V STPS20L25CT 2 PAK, this device is Parameter Tc = 145° Sinusoidal tp=2 µs square F=1kHz tp = 100 µs square tp = 1µ 25°C STPS20L25CT/ TO-220AB D PAK STPS20L25CG Value 25 30 Per diode 10 Per device 20 ...

  • Page 2

    ... STPS20L25CT/CG THERMAL RESISTANCES Symbol R Junction to case th (j- (c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1 th(j-c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Tests conditions I * Reverse leakage current Forward voltage drop F Pulse test 380 µs, < evaluate the maximum conduction losses use the following equation : ...

  • Page 3

    ... C(nF) 5.0 1.0 VR(V) 0 Fig. 10: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness : 35 µm). (STPS20L25G only) Rth(j-a) (°C/ STPS20L25CT/CG = 0.5 = 0.2 = 0.1 tp(s) Single pulse 1.0E-3 1.0E-2 1.0E-1 VR( S(Cu) (cm² =tp/T tp 1.0E+0 F=1MHz Tj=25° ...

  • Page 4

    ... STPS20L25CT/CG PACKAGE MECHANICAL DATA 2 D PAK FLAT ZONE NO LESS THAN 2mm FOOTPRINT DIMENSIONS (in millimeters) 16.90 10.30 8.90 4/5 REF COOLING n (METHOD C) 5.08 1.30 3.70 DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 2.49 2.69 0.098 0.106 0.03 0.23 ...

  • Page 5

    ... Diam. Package TO-220AB 2 D PAK 2 D PAK STMicroelectronics GROUP OF COMPANIES http://www.st.com STPS20L25CT/CG DIMENSIONS Millimeters Inches Min. Max. Min. 4.40 4.60 0.173 1.23 1.32 0.048 2.40 2.72 0.094 0.49 0.70 0.019 0.61 0.88 0.024 1.14 1.70 0.044 1.14 1.70 0.044 4.95 5 ...