STPS20L25CT STMicroelectronics, STPS20L25CT Datasheet - Page 3

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STPS20L25CT

Manufacturer Part Number
STPS20L25CT
Description
DIODE SCHOTTKY 25V 10A TO-220AB
Manufacturer
STMicroelectronics
Datasheet

Specifications of STPS20L25CT

Voltage - Forward (vf) (max) @ If
460mV @ 10A
Current - Reverse Leakage @ Vr
800µA @ 25V
Current - Average Rectified (io) (per Diode)
10A
Voltage - Dc Reverse (vr) (max)
25V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Other names
497-7552-5
STPS20L25CT

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Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values).
200
180
160
140
120
100
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).
5E+2
1E+2
1E+1
1E+0
Fig. 9: Forward voltage drop versus forward
current (maximum values).
100.0
1E-1
1E-2
80
60
40
20
10.0
1E-3
0
1.0
0.1
IM(A)
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0
IFM(A)
IR(mA)
I
M
Typical values
=0.5
t
Tj=150°C
5
Tj=150°C
Tj=25°C
Tj=125°C
Tj=125°C
1E-2
10
Tj=25°C
t(s)
VFM(V)
VR(V)
15
1E-1
20
Tc=100°C
Tc=25°C
Tc=75°C
1E+0
25
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration.
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values).
Fig. 10: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness : 35 µm).
(STPS20L25G only)
1.0
0.8
0.6
0.4
0.2
0.0
5.0
1.0
0.1
80
70
60
50
40
30
20
10
1.0E-4
0
0
1
Rth(j-a) (°C/W)
C(nF)
Zth(j-c)/Rth(j-c)
= 0.5
= 0.2
= 0.1
4
Single pulse
2
1.0E-3
8
12
16
S(Cu) (cm²)
5
1.0E-2
tp(s)
VR(V)
20
STPS20L25CT/CG
10
24
1.0E-1
28
20
=tp/T
32
T
F=1MHz
Tj=25°C
36
tp
1.0E+0
3/5
40
50

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