STPS20H100CFP STMicroelectronics, STPS20H100CFP Datasheet - Page 5

• Manufacturer Part Number: STPS20H100CFP
• Description: DIODE SCHOTTK 100V 10A TO220FPAB
• Manufacturer: STMicroelectronics

Specifications of STPS20H100CFP

• Voltage - Forward (vf) (max) @ If: 770mV @ 10A
• Current - Reverse Leakage @ Vr: 4.5µA @ 100V
• Current - Average Rectified (io) (per Diode): 10A
• Voltage - Dc Reverse (vr) (max): 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Repetitive Reverse Voltage Vrrm Max: 100V
• Forward Current If(av): 20A
• Forward Voltage Vf Max: 880mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Other names: 497-6745-5; STPS20H100CFP

STPS20H100C
Figure 7.
Figure 9.
Figure 11. Forward voltage drop versus
1.0
0.8
0.6
0.4
0.2
0.0
1E+4
1E+3
1E+2
1E+0
100.0
1E+1
1E-2
1E-1
10.0
1E-3
1.0
0.1
0.0
Z
0
I (µA)
th(j-c)
δ = 0.5
Single pulse
I
δ = 0.2
δ = 0.1
R
FM
(A)
10
/R
th(j-c)
(typical values)
0.2
T =150°C
T =125°C
T =100°C
T =25°C
j
j
j
j
T =125°C
Relative variation of thermal
impedance junction to case versus
pulse duration (per diode,
TO-220AB, D
Reverse leakage current versus
reverse voltage applied (typical
values, per diode)
forward current (maximum values,
per diode)
j
20
(typical values)
T =150°C
j
1E-2
30
0.4
40
V
t (s)
V (V)
p
FM
R
0.6
2
50
PAK, I
(V)
60
T =25°C
j
1E-1
T =125°C
0.8
2
j
PAK)
70
δ
=tp/T
80
1.0
T
90
tp
1E+0
100
1.2
Figure 8.
Figure 10. Junction capacitance versus
Figure 12. Thermal resistance junction to
1.0
0.8
0.6
0.4
0.2
0.0
80
70
60
50
40
30
20
10
1000
500
200
100
0
1E-2
0
R
Z
th(j-a)
1
th(j-c)
δ = 0.5
Single pulse
δ = 0.2
δ = 0.1
C(pF)
(°C/W)
5
/R
th(j-c)
2
Relative variation of thermal
impedance junction to case versus
pulse duration
(per diode, TO-220FPAB)
reverse voltage applied (typical
values, per diode)
ambient versus copper surface
under tab (epoxy printed circuit
board FR4, Cu = 35 µm, D
10
1E-1
15
5
S(Cu)(cm²)
t (s)
p
V (V)
20
R
10
25
1E+0
20
Characteristics
30
δ
=tp/T
2
PAK)
V
OSC
50
F=1MHz
T
T =25°C
35
=30mV
j
tp
RMS
1E+1
5/11
100
40