STPS40H100CW STMicroelectronics, STPS40H100CW Datasheet
STPS40H100CW
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STPS40H100CW Summary of contents
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... Tj Maximum operating junction temperature dV/dt Critical rate of rise of rise voltage July 2003 - Ed 100 V 175 °C 0.61 V Parameter Tc = 160° sinusoidal µ 1kHz square tp = 100 µs square Tj = 25° 1µ 25°C STPS40H100CW TO-247 Value Unit 100 30 Per diode 20 Per device 40 300 26400 ...
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... STPS40H100CW THERMAL RESISTANCES Symbol R Junction to case th (j- (c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1 th(j-c) STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter I * Reverse leakage current Forward voltage drop F Pulse test : * ms, < 380 µs, < evaluate the maximum conduction losses use the following equation : ...
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... Tc=150°C 0.2 0.0 1E-1 1E+0 1E-3 Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). C(nF) 3.0 1.0 0 100 1.2 1.4 1.6 1.8 STPS40H100CW = 0.5 = 0.1 Single pulse tp(s) 1E-2 1E-1 VR( =tp/T 1E+0 F=1MHz Tj=25°C 50 100 3/4 ...
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... Ordering type Marking STPS40H100CW STPS40H100CW Epoxy meets UL94,V0 n Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...