STPS61H100CW STMicroelectronics, STPS61H100CW Datasheet
STPS61H100CW
Specifications of STPS61H100CW
497-3220-5
497-3220
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STPS61H100CW Summary of contents
Page 1
... Critical rate of rise of reverse voltage dPtot thermal runaway condition for a diode on its own heatsink dTj Rth October 2003 - Ed 100 V 175°C 0.67 V Parameter Tc = 150° Sinusoidal tp = 1µ 25°C STPS61H100CW TO-247 Value Unit 100 80 30 Per diode 60 Per device 450 26400 - 175 175 10000 V/µ ...
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... STPS61H100CW THERMAL RESISTANCES Symbol R Junction to case th(j-c) R th(j-c) Junction to case When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1 th(j-c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter I * Reverse leakage R current Forward voltage drop Pulse test : * tp = 380 s, < evaluate the conduction losses use the following equation ...
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... Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). C(nF) 10.00 1.00 0. 100 T =25°C j (maximum values) 0.8 0.9 1.0 1.1 1.2 STPS61H100CW /R th(j-c) t (s) p 1.E-02 1.E- =tp/T 1.E+00 F=1MHz V =30mV OSC RMS T =25°C j 100 ...
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... Ordering type Marking STPS61H100CW STPS61H100CW Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...