STTH806TTI STMicroelectronics, STTH806TTI Datasheet
STTH806TTI
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STTH806TTI
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STTH806TTI Summary of contents
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... FACTOR SWITCHING DESCRIPTION The TURBOSWITCH “H” ultra high performance diode composed of two 300V dice in series. TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at high dI /dt Parameter sinusoidal STTH806TTI Insulated TO-220AB Value Unit 600 -65 +150 ° ...
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... STTH806TTI THERMAL AND POWER DATA Symbol Parameter R Junction to case thermal resistance th (j- (c) R Junction to case thermal resistance th (j-c) P Conduction power dissipation for 1 both diodes STATIC ELECTRICAL CHARACTERISTICS (for both diodes) Symbol Parameter I * Reverse leakage cur- R rent V ** Forward voltage drop F Pulse test : * ms, < 380 s, < ...
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... Peak reverse recovery current versus VR=400V IF=2*IF(av) Tj=125°C IF=IF(av) IF=0.5*IF(av) dIF/dt(A/µs) 50 100 150 200 250 300 350 400 450 500 Reverse charges versus dI VR=400V IF=2*IF(av) Tj=125°C IF=IF(av) dIF/dt(A/µs) 50 100 150 200 250 300 350 400 450 500 STTH806TTI /dt (90% F IF=0.5*IF(av) 3/5 ...
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... STTH806TTI Fig. 7: Softness factor versus dI values). S factor 0.6 0.5 0.4 0.3 0.2 0.1 dIF/dt(A/µs) 0 100 150 200 250 300 350 400 450 500 Fig. 9: Transient peak forward voltage versus dI /dt (90% confidence). F VFP(V) 20 IF=IF(av) 18 Tj=125° dIF/dt(A/µ 100 150 200 250 300 350 400 450 500 ...
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... Package Weight TO-220AB 2.3 g. STMicroelectronics GROUP OF COMPANIES http://www.st.com STTH806TTI DIMENSIONS Millimeters Inches Min. Typ. Max. Min. Typ. Max. 15.20 15.90 0.598 3.50 4.20 0.137 13.00 14.00 0.511 10.00 10.40 0.393 0.61 0.88 0.024 1.23 1.32 0.048 4.40 4.60 0.173 0.49 ...