STPS60L30CW STMicroelectronics, STPS60L30CW Datasheet

DIODE SCHOTTKY 30V 30A TO-247

STPS60L30CW

Manufacturer Part Number
STPS60L30CW
Description
DIODE SCHOTTKY 30V 30A TO-247
Manufacturer
STMicroelectronics
Datasheet

Specifications of STPS60L30CW

Voltage - Forward (vf) (max) @ If
460mV @ 30A
Current - Reverse Leakage @ Vr
4mA @ 30V
Current - Average Rectified (io) (per Diode)
30A
Voltage - Dc Reverse (vr) (max)
30V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole, Radial
Package / Case
TO-247-3
Product
Schottky Rectifiers
Peak Reverse Voltage
30 V
Forward Continuous Current
30 A
Max Surge Current
600 A
Configuration
Dual Common Cathode
Forward Voltage Drop
0.55 V at 60 A
Maximum Reverse Leakage Current
4000 uA
Operating Temperature Range
+ 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-2755-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STPS60L30CW
Manufacturer:
ST
Quantity:
2 100
Part Number:
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Manufacturer:
MITSUBISHI
Quantity:
6 000
Part Number:
STPS60L30CW
Manufacturer:
ST
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Part Number:
STPS60L30CW
Manufacturer:
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Quantity:
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DESCRIPTION
Dual center tap Schottky rectifier suited for Switch
Mode Power Supply and high frequency DC to DC
converters.
Packaged in TO247, this device is intended for
use in low voltage, high frequency inverters,
free-wheeling and polarity protection applications.
MAIN PRODUCT CHARACTERISTICS
FEATURES AND BENEFITS
n
n
n
n
n
n
ABSOLUTE RATINGS (limiting values, per diode)
* :
July 2003 - Ed: 3A
Symbol
I
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
EXTREMELY FAST SWITCHING
LOW FORWARD VOLTAGE DROP
LOW THERMAL RESISTANCE
AVALANCHE CAPABILITY SPECIFIED
V
F(RMS)
P
dV/dt
I
I
I
F(AV)
T
dPtot
RRM
FSM
RRM
ARM
Tj
dTj
stg
V
Tj (max)
F
V
I
F(AV)
(max)
®
RRM
Repetitive peak reverse voltage
RMS forward current
Average forward current
Surge non repetitive forward current
Peak repetitive reverse current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise reverse voltage
Rth j
(
1
a
)
thermal runaway condition for a diode on its own heatsink
LOW DROP POWER SCHOTTKY RECTIFIER
2 x 30 A
150 °C
0.38 V
30 V
Parameter
Tc = 130 C
tp = 10 ms Sinusoidal
tp = 2 µs F = 1kHz square
tp = 1µs Tj = 25°C
= 0.5
Per diode
Per device
STPS60L30CW
A1
A2
TO247
- 65 to + 150
11000
10000
Value
K
A1
600
150
30
50
30
60
2
K
A2
Unit
V/µs
°C
W
V
A
A
A
A
C
1/4

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STPS60L30CW Summary of contents

Page 1

... Critical rate of rise reverse voltage dPtot thermal runaway condition for a diode on its own heatsink dTj Rth July 2003 - Ed 150 °C 0.38 V Parameter Tc = 130 Sinusoidal µ 1kHz square tp = 1µ 25°C STPS60L30CW TO247 Value Per diode 60 Per device 600 2 11000 - 150 150 10000 ...

Page 2

... STPS60L30CW THERMAL RESISTANCE Symbol R Junction to case th (j- (c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1 th(j-c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter I * Reverse leakage R current V * Forward voltage drop F Pulse test : * tp = 380 µs, < evaluate the conduction losses use the following equation : ...

Page 3

... Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 Tc=25°C Tc=75°C 0.4 Tc=125°C 0.2 0.0 1E-4 1E-1 1E+0 Fig. 8: Junction capacitance versus reverse voltage applied (typical values) (per diode). C(nF STPS60L30CW tp(s) Single pulse 1E-3 1E-2 1E-1 VR( =tp/T tp 1E+0 F=1MHz Tj=25°C 50 3/4 ...

Page 4

... Ordering type Marking STPS60L30CW STPS60L30CW Epoxy meets UL94,V0 n Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...

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