STPS60L30CW STMicroelectronics, STPS60L30CW Datasheet
STPS60L30CW
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STPS60L30CW Summary of contents
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... Critical rate of rise reverse voltage dPtot thermal runaway condition for a diode on its own heatsink dTj Rth July 2003 - Ed 150 °C 0.38 V Parameter Tc = 130 Sinusoidal µ 1kHz square tp = 1µ 25°C STPS60L30CW TO247 Value Per diode 60 Per device 600 2 11000 - 150 150 10000 ...
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... STPS60L30CW THERMAL RESISTANCE Symbol R Junction to case th (j- (c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1 th(j-c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter I * Reverse leakage R current V * Forward voltage drop F Pulse test : * tp = 380 µs, < evaluate the conduction losses use the following equation : ...
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... Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 Tc=25°C Tc=75°C 0.4 Tc=125°C 0.2 0.0 1E-4 1E-1 1E+0 Fig. 8: Junction capacitance versus reverse voltage applied (typical values) (per diode). C(nF STPS60L30CW tp(s) Single pulse 1E-3 1E-2 1E-1 VR( =tp/T tp 1E+0 F=1MHz Tj=25°C 50 3/4 ...
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... Ordering type Marking STPS60L30CW STPS60L30CW Epoxy meets UL94,V0 n Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...