BAV70WT1G ON Semiconductor, BAV70WT1G Datasheet

DIODE SWITCH DUAL CC 70V SOT323

BAV70WT1G

Manufacturer Part Number
BAV70WT1G
Description
DIODE SWITCH DUAL CC 70V SOT323
Manufacturer
ON Semiconductor
Datasheet

Specifications of BAV70WT1G

Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Current - Reverse Leakage @ Vr
5µA @ 70V
Current - Average Rectified (io) (per Diode)
200mA (DC)
Voltage - Dc Reverse (vr) (max)
70V
Reverse Recovery Time (trr)
6ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Common Cathode
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Product
Switching Diodes
Peak Reverse Voltage
70 V
Forward Continuous Current
0.2 A
Max Surge Current
0.5 A
Configuration
Dual Common Cathode
Recovery Time
6 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
5 uA
Operating Temperature Range
- 55 C to + 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BAV70WT1GOSTR

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BAV70WT1G
Dual Switching Diode
Common Cathode
Features
1. FR-- 5 = 1.0 ¢ 0.75 ¢ 0.062 in.
2. Alumina = 0.4 ¢ 0.3 ¢ 0.024 in. 99.5% alumina.
 Semiconductor Components Industries, LLC, 2010
October, 2010 - - Rev. 5
MAXIMUM RATINGS (T
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommen-
ded Operating Conditions is not implied. Extended exposure to stresses
above the Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Reverse Voltage
Forward Current
Peak Forward Surge Current
Total Device Dissipation FR-- 5 Board
Thermal Resistance,
Total Device Dissipation
Thermal Resistance,
Junction and Storage Temperature
Compliant
These Devices are Pb- -Free, Halogen Free/BFR Free and are RoHS
(Note 1)
T
Derate above 25C
Junction--to--Ambient
Alumina Substrate (Note 2) T
Derate above 25C
Junction--to--Ambient
A
= 25C
Characteristic
Rating
A
= 25C)
A
= 25C
I
Symbol
Symbol
FM(surge)
T
R
R
J
V
P
P
, T
I
θJA
θJA
F
R
D
D
stg
-- 55 to
+150
Max
Max
200
500
200
625
300
417
1.6
2.4
70
1
mW/C
mW/C
C/W
C/W
Unit
Unit
mW
mW
mA
mA
C
V
†For information on tape and reel specifications,
BAV70WT1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
Device
2
A4
M
G
(Note: Microdot may be in either location)
CATHODE
ORDERING INFORMATION
3
3
http://onsemi.com
http://onsemi.com
= Specific Device Code
= Date Code
= Pb--Free Package
(Pb--Free)
SOT--323
CASE 419
Package
SOT- -323
STYLE 5
Publication Order Number:
3000 / Tape & Reel
ANODE
ANODE
MARKING
DIAGRAM
1
Shipping
1
2
A4 MG
BAV70WT1/D
3
G
2

Related parts for BAV70WT1G

BAV70WT1G Summary of contents

Page 1

... R 625 C/W θJA P 300 mW D 2.4 mW/C R 417 C/W θJA BAV70WT1G C J stg +150 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com http://onsemi.com ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic Reverse Breakdown Voltage (I = 100 mA) (BR) Reverse Voltage Leakage Current (Note Forward Voltage (I = 1 ...

Page 3

Ω 10% 90 INPUT PULSE Figure 1. Recovery Time Equivalent Test Circuit 1 KΩ Ω 90% 10 INPUT PULSE BAV70 I ...

Page 4

T = 85 40C A 0.1 0.2 0.4 0.6 0 FORWARD VOLTAGE (VOLTS) F Figure 3. Forward Voltage 1.0 0.9 0.8 0.7 0 1.0 0 25C A ...

Page 5

... A1 *For additional information on our Pb--Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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