BAS16DXV6T1G ON Semiconductor, BAS16DXV6T1G Datasheet

DIODE SWITCH DUAL 75V SOT563

BAS16DXV6T1G

Manufacturer Part Number
BAS16DXV6T1G
Description
DIODE SWITCH DUAL 75V SOT563
Manufacturer
ON Semiconductor
Datasheet

Specifications of BAS16DXV6T1G

Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Current - Reverse Leakage @ Vr
1µA @ 75V
Current - Average Rectified (io) (per Diode)
200mA (DC)
Voltage - Dc Reverse (vr) (max)
75V
Reverse Recovery Time (trr)
6ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
2 Independent
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-6
Product
Switching Diodes
Peak Reverse Voltage
75 V
Forward Continuous Current
0.2 A
Max Surge Current
0.5 A
Configuration
Dual Parallel
Recovery Time
6 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
1 uA
Operating Temperature Range
- 55 C to + 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Forward Voltage Vf Max
1V
Reverse Recovery Time Trr Max
6ns
Forward Surge Current Ifsm Max
500mA
Diode Case Style
SOT-563
No. Of Pins
2
Leaded Process Compatible
Yes
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BAS16DXV6T1GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAS16DXV6T1G
Manufacturer:
ON Semiconductor
Quantity:
34 442
Part Number:
BAS16DXV6T1G
Manufacturer:
ON Semiconductor
Quantity:
900
Part Number:
BAS16DXV6T1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
BAS16DXV6T1G
Manufacturer:
ON/安森美
Quantity:
20 000
BAS16DXV6T1,
BAS16DXV6T5
Dual Switching Diode
Features
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 @ Minimum Pad
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2005
November, 2005 − Rev. 2
THERMAL CHARACTERISTICS
Continuous Reverse Voltage
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse Width = 10 ms
Total Device Dissipation
Derate above 25°C
Thermal Resistance Junction-to-Ambient
Total Device Dissipation
Derate above 25°C
Thermal Resistance Junction-to-Ambient
Junction and Storage Temperature
Pb−Free Packages are Available
(Both Junctions Heated)
(One Junction Heated)
Characteristic
Characteristic
Rating
(T
A
= 25°C)
Preferred Device
T
T
A
A
= 25°C
= 25°C
I
Symbol
Symbol
Symbol
FM(surge)
T
R
R
J
V
P
P
, T
I
qJA
qJA
F
R
D
D
stg
(Note 1)
(Note 1)
(Note 1)
(Note 1)
(Note 1)
(Note 1)
−55 to
+150
Max
Max
Max
200
500
357
350
500
250
2.9
4.0
75
1
mW/°C
mW/°C
°C/W
°C/W
Unit
Unit
Unit
mW
mW
mA
mA
°C
V
†For information on tape and reel specifications,
Preferred devices are recommended choices for future use
and best overall value.
BAS16DXV6T1
BAS16DXV6T1G
BAS16DXV6T5
BAS16DXV6T5G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Device
A6 = Specific Device Code
M = Date Code
G
(Note: Microdot may be in either location)
ORDERING INFORMATION
MARKING DIAGRAM
= Pb−Free Package
http://onsemi.com
6
4
CASE 463A
SOT−563
PLASTIC
6
(Pb−Free)
(Pb−Free)
SOT−563
SOT−563
SOT−563
SOT−563
A6 MG
Package
5 4
G
Publication Order Number:
1
2
3
4000/Tape & Reel
4000/Tape & Reel
8000/Tape & Reel
8000/Tape & Reel
1
3
BAS16DXV6/D
4 mm pitch
4 mm pitch
2 mm pitch
2 mm pitch
Shipping

Related parts for BAS16DXV6T1G

BAS16DXV6T1G Summary of contents

Page 1

... − stg +150 BAS16DXV6T1 BAS16DXV6T1G BAS16DXV6T5 BAS16DXV6T5G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic Forward Voltage (I = 1 150 mA) F Reverse Current ( 150°C) R ...

Page 3

MAX 10% 90 100 ns Figure 1. Reverse Recovery Time Equivalent Test Circuit 20 ns MAX 10% 90 400 ns Figure 2. Stored Charge Equivalent Test Circuit 120 ns V 90% 10 ...

Page 4

T = 85° −40°C A 0.1 0.2 0.4 0.6 0 FORWARD VOLTAGE (VOLTS) F Figure 4. Forward Voltage 0.68 0.64 0.60 0.56 0. 0.5 0.2 0.1 0.1 0.05 ...

Page 5

... SOLDERING FOOTPRINT* 1.35 0.0531 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD L FINISH THICKNESS ...

Page 6

... Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com BAS16DXV6T1, BAS16DXV6T5 N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 6 ON Semiconductor Website: http://onsemi ...

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