BTA208S-800E /T3 NXP Semiconductors, BTA208S-800E /T3 Datasheet - Page 2

• Manufacturer Part Number: BTA208S-800E /T3
• Description: Triacs THYR AND TRIACS
• Manufacturer: NXP Semiconductors

Specifications of BTA208S-800E /T3

• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 72 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 10 mA
• Holding Current (ih Max): 25 mA
• Forward Voltage Drop: 1.65 V @ 10 A
• Mounting Style: SMD/SMT
• Package / Case: SOT-428
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTA208S-800E,118

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
BTA208S-800E
Product data sheet
Pin
1
2
3
mb
Type number
BTA208S-800E
Symbol Description
T1
T2
G
T2
Pinning information
Ordering information
main terminal 1
main terminal 2
gate
mounting base; main terminal 2
Table 1.
Package
Name
DPAK
Symbol
Static characteristics
I
GT
Quick reference data
Parameter
gate trigger current
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
All information provided in this document is subject to legal disclaimers.
Rev. 05 — 14 April 2011
Simplified outline
…continued
Conditions
V
T
V
T
V
T
j
j
j
D
D
D
= 25 °C; see
= 25 °C; see
= 25 °C; see
SOT428 (DPAK)
= 12 V; I
= 12 V; I
= 12 V; I
1
mb
2
T
T
T
= 0.1 A; T2+ G+;
= 0.1 A; T2+ G-;
= 0.1 A; T2- G-;
3
Figure 7
Figure 7
Figure 7
BTA208S-800E
Graphic symbol
Min
-
-
-
T2
sym051
© NXP B.V. 2011. All rights reserved.
3Q Hi-Com Triac
Typ
-
-
-
Version
SOT428
Max Unit
10
10
10
T1
G
2 of 14
mA
mA
mA