BTA208S-800E /T3 NXP Semiconductors, BTA208S-800E /T3 Datasheet - Page 4

• Manufacturer Part Number: BTA208S-800E /T3
• Description: Triacs THYR AND TRIACS
• Manufacturer: NXP Semiconductors

Specifications of BTA208S-800E /T3

• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 72 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 10 mA
• Holding Current (ih Max): 25 mA
• Forward Voltage Drop: 1.65 V @ 10 A
• Mounting Style: SMD/SMT
• Package / Case: SOT-428
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTA208S-800E,118

NXP Semiconductors
BTA208S-800E
Product data sheet
Fig 3.
Fig 4.
P
(W)
I
TSM
(A)
tot
12
10
80
60
40
20
8
6
4
2
0
0
values
Total power dissipation as a function of RMS on-state current; maximum values
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
0
1
conduction
(degrees)
angle
120
180
30
60
90
factor
form
1.57
2.8
2.2
1.9
a
4
2
All information provided in this document is subject to legal disclaimers.
10
Rev. 05 — 14 April 2011
4
6
10
2
BTA208S-800E
number of cycles
8
120
90
60
30
= 180
I
T
T
j(init)
I
T(RMS)
= 25 C max
T
© NXP B.V. 2011. All rights reserved.
3Q Hi-Com Triac
(A)
003aaa968
003aaf618
I
TSM
t
10
10
101
105
109
113
3
121
117
125
T
mb(max)
( C)
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