BTA208S-800E /T3 NXP Semiconductors, BTA208S-800E /T3 Datasheet - Page 5

• Manufacturer Part Number: BTA208S-800E /T3
• Description: Triacs THYR AND TRIACS
• Manufacturer: NXP Semiconductors

Specifications of BTA208S-800E /T3

• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 72 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 10 mA
• Holding Current (ih Max): 25 mA
• Forward Voltage Drop: 1.65 V @ 10 A
• Mounting Style: SMD/SMT
• Package / Case: SOT-428
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTA208S-800E,118

NXP Semiconductors
BTA208S-800E
Product data sheet
Fig 5.
I
TSM
(A)
10
10
10
3
2
10
Non-repetitive peak on-state current as a function of pulse width; maximum values
2
(1)
10
1
All information provided in this document is subject to legal disclaimers.
Rev. 05 — 14 April 2011
1
10
BTA208S-800E
I
T
T
t
j(init)
p
(ms)
t
= 25 C max
p
© NXP B.V. 2011. All rights reserved.
3Q Hi-Com Triac
003aab121
I
TSM
t
10
2
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