BTA208S-800E /T3 NXP Semiconductors, BTA208S-800E /T3 Datasheet - Page 6

• Manufacturer Part Number: BTA208S-800E /T3
• Description: Triacs THYR AND TRIACS
• Manufacturer: NXP Semiconductors

Specifications of BTA208S-800E /T3

• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 72 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 10 mA
• Holding Current (ih Max): 25 mA
• Forward Voltage Drop: 1.65 V @ 10 A
• Mounting Style: SMD/SMT
• Package / Case: SOT-428
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTA208S-800E,118

NXP Semiconductors
5. Thermal characteristics
Table 5.
BTA208S-800E
Product data sheet
Symbol
R
R
Fig 6.
th(j-mb)
th(j-a)
Z
(K/W)
th(j-mb)
10
10
10
1
1
2
10
Transient thermal impedance from junction to mounting base as a function of pulse width
5
Thermal characteristics
Parameter
thermal resistance from junction
to mounting base
thermal resistance from junction
to ambient
10
4
All information provided in this document is subject to legal disclaimers.
10
3
unidirectional
Rev. 05 — 14 April 2011
Conditions
full cycle; see
half cycle; see
in free air; printed circuit board
(FR4) mounted
10
2
bidirectional
Figure 6
Figure 6
10
1
BTA208S-800E
Min
-
-
-
1
P
Typ
-
-
75
t
p
t p
© NXP B.V. 2011. All rights reserved.
3Q Hi-Com Triac
(s)
003aaf584
Max
2
2.4
-
t
10
Unit
K/W
K/W
K/W
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