BTA208S-600E /T3 NXP Semiconductors, BTA208S-600E /T3 Datasheet - Page 5

• Manufacturer Part Number: BTA208S-600E /T3
• Description: Triacs TAPE13 TRIAC
• Manufacturer: NXP Semiconductors

Specifications of BTA208S-600E /T3

• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 72 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 10 mA
• Holding Current (ih Max): 25 mA
• Forward Voltage Drop: 1.65 V @ 10 A
• Mounting Style: SMD/SMT
• Package / Case: SOT-428
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTA208S-600E,118

NXP Semiconductors
5. Thermal characteristics
Table 5.
BTA208S-600E
Product data sheet
Symbol
R
R
Fig 5.
Fig 6.
th(j-mb)
th(j-a)
Z
(K/W)
th(j-mb)
I
TSM
(A)
10
10
10
10
10
10
1
3
2
1
2
10
10
Non-repetitive peak on-state current as a function of pulse width; maximum values
Transient thermal impedance from junction to mounting base as a function of pulse width
2
5
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
(1)
10
4
10
1
Conditions
full cycle; see
half cycle; see
in free air; printed circuit board (FR4)
mounted
All information provided in this document is subject to legal disclaimers.
10
3
unidirectional
Rev. 5 — 13 April 2011
Figure 6
Figure 6
10
1
2
bidirectional
10
1
10
BTA208S-600E
Min
-
-
-
I
1
T
P
T
t
j(init)
p
(ms)
Typ
-
-
75
t
= 25 C max
p
t
p
t p
© NXP B.V. 2011. All rights reserved.
3Q Hi-Com Triac
(s)
003aab121
003aaf584
I
Max
2
2.5
-
TSM
t
t
10
10
2
Unit
K/W
K/W
K/W
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