2N5062 ON Semiconductor, 2N5062 Datasheet - Page 4

• Manufacturer Part Number: 2N5062
• Description: SCRs 100V 800mA Thyristor
• Manufacturer: ON Semiconductor

Specifications of 2N5062

• Breakover Current Ibo Max: 10 A
• Rated Repetitive Off-state Voltage Vdrm: 100 V
• Off-state Leakage Current @ Vdrm Idrm: 0.01 mA
• Forward Voltage Drop: 1.7 V
• Gate Trigger Voltage (vgt): 0.8 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 0.2 mA
• Holding Current (ih Max): 5 mA
• Mounting Style: Through Hole
• Package / Case: TO-92-3 (TO-226)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

130
120
100
110
90
80
70
60
50
0.07
0.05
0.03
0.02
0.01
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0
0
Figure 1. Maximum Case Temperature
v
T
, INSTANTANEOUS ON‐STATE VOLTAGE (VOLTS)
Figure 3. Typical Forward Voltage
0.1
I
T(AV)
0.5
, AVERAGE ON‐STATE CURRENT (AMP)
a = 30°
0.2
1.0
T
J
a = CONDUCTION ANGLE
= 110°C
60°
0.3
1.5
90°
CASE MEASUREMENT
POINT - CENTER OF
FLAT PORTION
25°C
120°
2.0
0.4
CURRENT DERATING
CURRENT DERATING
http://onsemi.com
180°
dc
2.5
a
0.5
4
7.0
5.0
3.0
2.0
1.0
0.8
0.6
0.4
0.2
10
130
110
0
90
70
50
30
1.0
Figure 4. Maximum Non−Repetitive Surge Current
0
0
a = CONDUCTION ANGLE
Figure 2. Maximum Ambient Temperature
2.0
0.1
I
T(AV)
I
T(AV)
3.0
Figure 5. Power Dissipation
0.1
, AVERAGE ON‐STATE CURRENT (AMP)
, AVERAGE ON‐STATE CURRENT (AMP)
a
a = 30°
a = 30°
5.0 7.0 10
NUMBER OF CYCLES
0.2
a = CONDUCTION ANGLE
0.2
60°
60°
0.3
90°
20
TYPICAL PRINTED
CIRCUIT BOARD
MOUNTING
120°
30
90°
0.3
0.4
120°
50 70 100
dc
180°
dc
180°
0.5
a
0.4