IRFR9010TRLPBF Vishay, IRFR9010TRLPBF Datasheet
IRFR9010TRLPBF
Specifications of IRFR9010TRLPBF
Related parts for IRFR9010TRLPBF
IRFR9010TRLPBF Summary of contents
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... IRFR9010TR a SiHFR9010T = 25 °C, unless otherwise noted ° 100 ° ° for Ω, peak 5 ≤ 150 °C, suggested Ω Vishay Siliconix DPAK (TO-252) IPAK (TO-251 SiHFR9010TRL-GE3 SiHFU9010-GE3 a IRFR9010TRLPbF IRFU9010PbF a SiHFR9010TL-E3 SiHFU9010-E3 a IRFR9010TRL IRFU9010 a SiHFR9010TL SiHFU9010 SYMBOL LIMIT ± 5 3 0.20 E 136 5 2.5 ...
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... IRFR9010, IRFU9010, SiHFR9010, SiHFU9010 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink a Maximum Junction-to-Case (Drain) Note a. Mounting pad must cover heatsink surface area. SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current ...
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... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics Fig Typical Transfer Characteristics Fig Typical Saturation Characteristics Document Number: 91378 S10-1135-Rev. C, 10-May-10 IRFR9010, IRFU9010, SiHFR9010, SiHFU9010 Fig Typical Transconductance vs. Drain Current Fig Typical Source-Drain Diode Forward Voltage Vishay Siliconix Fig Maximum Safe Operating Area www.vishay.com 3 ...
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... IRFR9010, IRFU9010, SiHFR9010, SiHFU9010 Vishay Siliconix Fig Breakdown Voltage vs. Temperature Fig Normalized On-Resistance vs. Temperature www.vishay.com 4 Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage Document Number: 91378 S10-1135-Rev. C, 10-May-10 ...
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... Fig Typical On-Resistance vs. Drain Current Fig Maximum Drain Current vs. Case Temperature Document Number: 91378 S10-1135-Rev. C, 10-May-10 IRFR9010, IRFU9010, SiHFR9010, SiHFU9010 Fig. 13a - Maximum Avalanche vs. Starting Junction Vary t p required I Fig. 13b - Unclamped Inductive Test Circuit Fig. 13c - Unclamped Inductive Waveforms Vishay Siliconix Temperature obtain L D.U. 0.05 Ω ...
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... IRFR9010, IRFU9010, SiHFR9010, SiHFU9010 Vishay Siliconix Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration t t d(on Fig. 15a - Switching Time Waveforms D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 15b - Switching Time Test Circuit www.vishay.com d(off Charge Fig. 16a - Basic Gate Charge Waveform Current regulator Same type as D ...
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... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91378. Document Number: 91378 S10-1135-Rev ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...