MRFE6VP5600HR6 Freescale Semiconductor, MRFE6VP5600HR6 Datasheet

RF MOSFET Power VHV6 600W 50V NI1230H

MRFE6VP5600HR6

Manufacturer Part Number
MRFE6VP5600HR6
Description
RF MOSFET Power VHV6 600W 50V NI1230H
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRFE6VP5600HR6

Mounting Style
SMD/SMT
Transistor Polarity
N-Channel
Configuration
Single
Drain-source Breakdown Voltage
130 V
Power Dissipation
1667 W
Package / Case
NI-1230
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRFE6VP5600HR6
Manufacturer:
AUK
Quantity:
51 600
© Freescale Semiconductor, Inc., 2010--2011. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
(including laser and plasma exciters), broadcast (analog and digital), aerospace
and radio/land mobile applications. They are unmatched input and output
designs allowing wide frequency range utilization, between 1.8 and 600 MHz.
• Typical Performance: V
• Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc,
Features
• Unmatched Input and Output Allowing Wide Frequency Range Utilization
• Device can be used Single--Ended or in a Push--Pull Configuration
• Qualified Up to a Maximum of 50 V
• Characterized from 30 V to 50 V for Extended Power Range
• Suitable for Linear Application with Appropriate Biasing
• Integrated ESD Protection with Greater Negative Gate--Source Voltage
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Total Device Dissipation @ T
Operating Junction Temperature
Thermal Resistance, Junction to Case
These high ruggedness devices are designed for use in high VSWR industrial
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
230 MHz, at all Phase Angles, Designed for Enhanced Ruggedness
Range for Improved Class C Operation
For R5 Tape and Reel options, see p. 12.
• 600 Watts Pulsed Peak Power, 20% Duty Cycle, 100 μsec
Derate above 25°C
Case Temperature 68°C, 600 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle, 100 mA, 230 MHz
Case Temperature 60°C, 600 W CW, 100 mA, 230 MHz
Pulsed (100 μsec,
MTTF calculators by product.
Select Documentation/Application Notes -- AN1955.
20% Duty Cycle)
Signal Type
CW
Rating
600 Peak
600 Avg.
DD
C
P
(W)
out
= 25°C
= 50 Volts, I
(1,2)
DD
(MHz)
230
230
Operation
DQ
f
Characteristic
= 100 mA
Symbol
V
V
T
T
P
DSS
T
stg
GS
(dB)
25.0
24.6
C
G
D
J
ps
-- 65 to +150
--0.5, +130
--6.0, +10
74.6
75.2
(%)
η
Value
1667
8.33
D
150
225
(dB)
IRL
--18
--17
W/°C
Unit
Vdc
Vdc
°C
°C
°C
W
Document Number: MRFE6VP5600H
MRFE6VP5600HR6 MRFE6VP5600HSR6
CASE 375E- -04, STYLE 1
CASE 375D- -05, STYLE 1
MRFE6VP5600HSR6
RF
RF
MRFE6VP5600HR6
MRFE6VP5600HSR6
MRFE6VP5600HR6
in
in
1.8- -600 MHz, 600 W CW, 50 V
/V
/V
Figure 1. Pin Connections
GS
GS
LATERAL N- -CHANNEL
PARTS ARE PUSH- -PULL
RF POWER MOSFETs
NI- -1230S
NI- -1230
3
4
BROADBAND
Symbol
(Top View)
R
Z
θJC
θJC
Value
Rev. 1, 1/2011
0.022
0.12
1
2 RF
(2,3)
RF
out
out
/V
/V
°C/W
Unit
DS
DS
1

Related parts for MRFE6VP5600HR6

MRFE6VP5600HR6 Summary of contents

Page 1

... MHz, 600 W CW LATERAL N- -CHANNEL BROADBAND RF POWER MOSFETs CASE 375D- -05, STYLE 1 NI- -1230 MRFE6VP5600HR6 CASE 375E- -04, STYLE 1 NI- -1230S MRFE6VP5600HSR6 PARTS ARE PUSH- -PULL out out (Top View) Figure 1. Pin Connections (2,3) Symbol Value Unit °C/W Z 0.022 θJC R 0.12 θJC MRFE6VP5600HR6 MRFE6VP5600HSR6 1 ...

Page 2

... Vdc ± 30 mV(rms) MHz Functional Tests (In Freescale Test Fixture, 50 ohm system) V Pulsed, 100 μsec Pulse Width, 20% Duty Cycle Power Gain Drain Efficiency Input Return Loss 1. Each side of device measured separately. MRFE6VP5600HR6 MRFE6VP5600HSR6 2 = 25°C unless otherwise noted) A Symbol I GSS V (BR)DSS ...

Page 3

... Microstrip Z3, Z4 0.170″ x 0.100″ Microstrip Z5, Z6 0.116″ x 0.285″ Microstrip Z7, Z8 0.116″ x 0.285″ Microstrip Z9, Z10 0.108″ x 0.285″ Microstrip Figure 1. MRFE6VP5600HR6(HSR6) Test Circuit Schematic - - Pulsed RF Device Data Freescale Semiconductor + C10 C11 C12 C13 R1 ...

Page 4

... C11 C12 C13 COAX1 COAX2 Figure 2. MRFE6VP5600HR6(HSR6) Test Circuit Component Layout - - Pulsed Table 5. MRFE6VP5600HR6(HSR6) Test Circuit Component Designations and Values - - Pulsed Part Chip Capacitor C2 Chip Capacitors C4 0.8--8.0 pF Variable Capacitor, Gigatrim Chip Capacitor C6, C10 22 μ Tantalum Capacitors C7, C11 0.1 μF Chip Capacitors ...

Page 5

... P , OUTPUT POWER (WATTS) PULSED out Figure 6. Pulsed Power Gain versus Output Power = 100 mA 230 MHz 25_C --30_C η D 100 P , OUTPUT POWER (WATTS) PULSED out versus Output Power MRFE6VP5600HR6 MRFE6VP5600HSR6 Ideal Actual 600 700 90 80 85_C --30_C 1000 5 ...

Page 6

... This above graph displays calculated MTTF in hours when the device is operated at V MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 9. MTTF versus Junction Temperature — CW MRFE6VP5600HR6 MRFE6VP5600HSR6 6 TYPICAL CHARACTERISTICS 110 130 150 170 190 ...

Page 7

... MHz Ω 230 1.78 + j5.45 2.75 + j5. Test circuit impedance as measured from source gate to gate, balanced configuration Test circuit impedance as measured from load drain to drain, balanced configuration. Device + Under -- Test -- + Z Z source load Ω o load Ω Output Matching Network MRFE6VP5600HR6 MRFE6VP5600HSR6 7 ...

Page 8

... MRFE6VP5600HR6 MRFE6VP5600HSR6 8 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...

Page 9

... RF Device Data Freescale Semiconductor MRFE6VP5600HR6 MRFE6VP5600HSR6 9 ...

Page 10

... MRFE6VP5600HR6 MRFE6VP5600HSR6 10 RF Device Data Freescale Semiconductor ...

Page 11

... RF Device Data Freescale Semiconductor MRFE6VP5600HR6 MRFE6VP5600HSR6 11 ...

Page 12

... MRFE6VP5600H and MRFE6VP5600HS in the R6 tape and reel option. The following table summarizes revisions to this document. Revision Date 0 Dec. 2010 • Initial Release of Data Sheet 1 Jan. 2011 • Fig. 1, Pin Connections, corrected pin 4 label from RF MRFE6VP5600HR6 MRFE6VP5600HSR6 12 R5 TAPE AND REEL OPTION REVISION HISTORY Description /V out ...

Page 13

... Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2010--2011. All rights reserved. MRFE6VP5600HR6 MRFE6VP5600HSR6 13 ...

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