BLF6G27LS-50BN,112 NXP Semiconductors, BLF6G27LS-50BN,112 Datasheet

RF MOSFET Power Single 65V 0.25Ohms

BLF6G27LS-50BN,112

Manufacturer Part Number
BLF6G27LS-50BN,112
Description
RF MOSFET Power Single 65V 0.25Ohms
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF6G27LS-50BN,112

Mounting Style
SMD/SMT
Resistance Drain-source Rds (on)
0.25 Ohms
Transistor Polarity
N-Channel
Configuration
Single
Drain-source Breakdown Voltage
65 V
Package / Case
SOT-1112B
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Power Gain (typ)@vds
16.5@28VdB
Frequency (min)
2.5GHz
Frequency (max)
2.7GHz
Package Type
CDFM
Pin Count
7
Forward Transconductance (typ)
5S
Operating Temp Range
-65C to 200C
Mounting
Surface Mount
Mode Of Operation
2-Carrier W-CDMA
Number Of Elements
1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
50 W LDMOS power transistor for base station applications at frequencies from
2500 MHz to 2700 MHz.
Table 1.
RF performance at T
[1]
Mode of operation
2-carrier W-CDMA
BLF6G27L-50BN;
BLF6G27LS-50BN
Power LDMOS transistor
Rev. 2 — 7 April 2011
Typical 2-carrier W-CDMA performance at frequencies of 2500 MHz and 2700 MHz, a
supply voltage of 28 V and an I
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (2500 MHz to 2700 MHz)
Internally matched for ease of use
Integrated current sense
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
RF power amplifiers for base stations and multi carrier applications in the 2500 MHz to
2700 MHz frequency range
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 5 MHz
Average output power = 3 W
Power gain = 16.5 dB (typical)
Efficiency = 14.5 %
ACPR = −47 dBc
Typical performance
case
= 25
f
(MHz)
2500 to 2700
°
C in a common source class-AB production test circuit.
Dq
of 430 mA:
I
(mA)
430
Dq
V
(V)
28
DS
P
(W)
3
L(AV)
Product data sheet
G
(dB)
16.5
p
η
(%)
14.5 −47
D
ACPR
(dBc)
[1]

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BLF6G27LS-50BN,112 Summary of contents

Page 1

... BLF6G27L-50BN; BLF6G27LS-50BN Power LDMOS transistor Rev. 2 — 7 April 2011 1. Product profile 1.1 General description 50 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. RF performance at T Mode of operation 2-carrier W-CDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8 0.01 % probability on CCDF per carrier; ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pin BLF6G27L-50BN (SOT1112A BLF6G27LS-50BN (SOT1112B [1] Connected to flange. 3. Ordering information Table 3. Type number BLF6G27L-50BN BLF6G27LS-50BN 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol GS(sense stg T j BLF6G27L-50BN_6G27LS-50BN Product data sheet Pinning ...

Page 3

... NXP Semiconductors 5. Thermal characteristics Table 5. Symbol Parameter R th(j-case) 6. Characteristics Table 6. ° Symbol Parameter V (BR)DSS V GS(th DSS I DSX I GSS DS(on) 7. Application information Table 7. All testing performed in Class-AB production test circuit; test signal 3GPP; test model 1; 64 DPCH; PAR = 8 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz 2600 MHz ...

Page 4

... Symbol PAR O 7.1 Ruggedness in Class-AB operation The BLF6G27L-50BN and BLF6G27LS-50BN are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions: V 7.2 Single carrier IS-95 Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). ...

Page 5

... NXP Semiconductors 20 ACPR 885 (dBc) (1) 30 (2) ( 430 mA ( 2500 MHz ( 2600 MHz ( 2700 MHz Fig 3. Single carrier IS-95 ACPR at 885 kHz as a function of load power; typical values 10 PAR 430 mA ( 2500 MHz ( 2600 MHz ( 2700 MHz Fig 5. Single carrier IS-95 peak-to-average power ratio as a function of load power; ...

Page 6

... NXP Semiconductors (dB (1) (2) ( 430 mA ( 2500 MHz ( 2600 MHz ( 2700 MHz Fig 7. Pulsed CW power gain as a function of load power; typical values BLF6G27L-50BN_6G27LS-50BN Product data sheet 001aan487 (W) L Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 2 — 7 April 2011 BLF6G27L(S)-50BN ...

Page 7

... NXP Semiconductors 7.4 2-carrier W-CDMA All testing performed in Class-AB production test circuit; test signal 3GPP; test model 1; 64 DPCH; PAR = 8 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz 2500 MHz 17 (dB) 16.5 16.0 (1) 15.5 (2) (3) 15.0 14 430 mA ( 2500 MHz ( 2600 MHz ( 2700 MHz Fig 9 ...

Page 8

... NXP Semiconductors 0 ACPR 5M (dBc) 10 (1) ( 430 mA ( 2500 MHz ( 2600 MHz ( 2700 MHz Fig 11. 2-carrier W-CDMA ACPR at 5 MHz as a function of load power; typical values BLF6G27L-50BN_6G27LS-50BN Product data sheet 001aan491 ACPR (dBc (W) L Fig 12. 2-carrier W-CDMA ACPR at 10 MHz as a All information provided in this document is subject to legal disclaimers. ...

Page 9

... NXP Semiconductors 7.5 Single carrier W-CDMA All testing performed in Class-AB production test circuit; test signal 3GPP; test model 1; 64 DPCH; PAR = 7 0.01 % probability on CCDF per carrier 2700 MHz °C; unless otherwise specified. T case 9.0 PAR 7.5 6.0 (1) (2) 4.5 (3) 3.0 1.5 ...

Page 10

... NXP Semiconductors 8. Package outline Flanged ceramic package; 2 mounting holes; 6 leads Dimensions (1) Unit max 4.65 1.14 5.26 0.18 mm nom min 3.76 0.89 5.00 0.10 max 0.183 0.045 0.207 0.007 inches nom min 0.148 0.035 0.197 0.004 Note 1. millimeter dimensions are derived from the original inch dimensions. ...

Page 11

... NXP Semiconductors Earless flanged ceramic package; 6 leads Dimensions (1) Unit max 4.65 1.14 5.26 0.18 mm nom min 3.76 0.89 5.00 0.10 max 0.183 0.045 0.207 0.007 inches nom min 0.148 0.035 0.197 0.004 Note 1. millimeter dimensions are derived from the original inch dimensions. ...

Page 12

... NXP Semiconductors 9. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 10. Abbreviations Table 9. Acronym 3GPP CCDF CW DPCH ESD LDMOS PAR RF VSWR W-CDMA ...

Page 13

... NXP Semiconductors 11. Revision history Table 10. Revision history Document ID BLF6G27L-50BN_6G27LS-50BN v.2 Modifications: BLF6G27L-50BN_6G27LS-50BN v.1 BLF6G27L-50BN_6G27LS-50BN Product data sheet Release date Data sheet status 20110407 Product data sheet • Section 1.1 on page has been changed • Table 1 on page 1: several changes have been made. ...

Page 14

... NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. ...

Page 15

... Product data sheet NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 16

... NXP Semiconductors 14. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 3 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 Application information 7.1 Ruggedness in Class-AB operation . . . . . . . . . 4 7.2 Single carrier IS- 7.3 Pulsed 7.4 2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 7 7 ...

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